This module contains a collection of YANG definitions for supporting the Broadband Forum requirements on management of Metallic ...
Version: 2022-05-23
module bbf-melt { yang-version 1.1; namespace "urn:bbf:yang:bbf-melt"; prefix bbf-melt; include bbf-melt-base; include bbf-melt-pointers; include bbf-melt-pmd; include bbf-melt-pmd-control-body; include bbf-melt-pmd-status-body; include bbf-melt-pmd-profiles; include bbf-melt-pmd-profile-body; include bbf-melt-processing-profiles; include bbf-melt-processing-profile-body; include bbf-melt-result-parameters; include bbf-melt-pmd-measurement-parameter-body; include bbf-melt-pmd-reporting-parameter-body; include bbf-melt-processing-derived-parameter-body; organization "Broadband Forum <https://www.broadband-forum.org> Common YANG Work Area"; contact "Comments or questions about this Broadband Forum YANG module should be directed to <mailto:help@broadband-forum.org>. Editor: Ken Kerpez, ASSIA, Inc. Editor: Joey Boyd, Adtran PS Leader: Joey Boyd, Adtran WA Director: Sven Ooghe, Nokia WA Director: Joey Boyd, Adtran"; description "This module contains a collection of YANG definitions for supporting the Broadband Forum requirements on management of Metallic Line Test (MELT) as defined in ITU-T G.996.2 and BBF TR-298. As such, this module is specific to access network equipment (e.g., BBF-specified Access Nodes and FTTdp DPUs). Copyright (c) 2016-2022 Broadband Forum Redistribution and use in source and binary forms, with or without modification, are permitted provided that the following conditions are met: 1. Redistributions of source code must retain the above copyright notice, this list of conditions and the following disclaimer. 2. Redistributions in binary form must reproduce the above copyright notice, this list of conditions and the following disclaimer in the documentation and/or other materials provided with the distribution. 3. Neither the name of the copyright holder nor the names of its contributors may be used to endorse or promote products derived from this software without specific prior written permission. THIS SOFTWARE IS PROVIDED BY THE COPYRIGHT HOLDERS AND CONTRIBUTORS "AS IS" AND ANY EXPRESS OR IMPLIED WARRANTIES, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE ARE DISCLAIMED. IN NO EVENT SHALL THE COPYRIGHT HOLDER OR CONTRIBUTORS BE LIABLE FOR ANY DIRECT, INDIRECT, INCIDENTAL, SPECIAL, EXEMPLARY, OR CONSEQUENTIAL DAMAGES (INCLUDING, BUT NOT LIMITED TO, PROCUREMENT OF SUBSTITUTE GOODS OR SERVICES; LOSS OF USE, DATA, OR PROFITS; OR BUSINESS INTERRUPTION) HOWEVER CAUSED AND ON ANY THEORY OF LIABILITY, WHETHER IN CONTRACT, STRICT LIABILITY, OR TORT (INCLUDING NEGLIGENCE OR OTHERWISE) ARISING IN ANY WAY OUT OF THE USE OF THIS SOFTWARE, EVEN IF ADVISED OF THE POSSIBILITY OF SUCH DAMAGE. The above license is used as a license under copyright only. Please reference the Forum IPR Policy for patent licensing terms <https://www.broadband-forum.org/ipr-policy>. Any moral rights which are necessary to exercise under the above license grant are also deemed granted under this license. This version of this YANG module is part of TR-355a4; see the TR itself for full legal notices."; revision "2022-05-23" { description "Amendment 4. * Approval Date: 2022-05-23 * Publication Date: 2022-05-23."; reference "TR-355a4: YANG Modules for FTTdp Management <https://www.broadband-forum.org/download/ TR-355_Amendment-4.pdf>"; } revision "2020-10-13" { description "Amendment 3. * Approval Date: 2020-10-13 * Publication Date: 2020-10-13."; reference "TR-355a3: YANG Modules for FTTdp Management <https://www.broadband-forum.org/download/ TR-355_Amendment-3.pdf>"; } revision "2019-06-11" { description "Amendment 2. * Approval Date: 2019-06-11 * Publication Date: 2019-06-11."; reference "TR-355a2: YANG Modules for FTTdp Management <https://www.broadband-forum.org/technical/download/ TR-355_Amendment-2.pdf>"; } revision "2018-10-01" { description "Amendment 1. * Approval Date: 2018-10-01 * Publication Date: 2018-10-01."; reference "TR-355a1: YANG Modules for FTTdp Management <https://www.broadband-forum.org/technical/download/ TR-355_Amendment-1.pdf>"; } revision "2017-11-27" { description "Corrigendum 2 (fixes to the previous revision). * Approval Date: see revision date above. * Publication Date: 2018-01-19."; reference "TR-355c2: YANG Modules for FTTdp Management <https://www.broadband-forum.org/technical/download/ TR-355_Corrigendum-2.pdf>"; } revision "2016-07-18" { description "Initial revision. * Approval Date: see revision date above. * Publication Date: 2016-08-05."; reference "TR-355: YANG Modules for FTTdp Management <https://www.broadband-forum.org/technical/download/ TR-355.pdf>"; } // features feature melt-p { description "Indicates support for Metallic Line Test (MELT) processing profiles (MELT-P)."; reference "ITU-T G.996.2 Annex F"; } feature melt-pmd-reporting-parameter-reliability { description "Indicates support for reporting the reliability of the Physical Medium Dependent (PMD) reporting parameters."; } feature melt-pmd-measurement-parameter-reliability { description "Indicates support for reporting the reliability of the Physical Medium Dependent (PMD) measurement parameters."; } feature melt-processing-derived-parameter-reliability { description "Indicates support for reporting the reliability of the processing derived parameters."; } // identities identity measurement-class { description "Base identity for defining the various measurements."; } identity melt-cdcr { base measurement-class; description "The 4-element DC resistance with controlled metallic voltage."; reference "ITU-T G.996.2 clause E.2.3.1 (MELT-CDCR-xx)"; } identity melt-cc { base measurement-class; description "The 3-element capacitance with controlled metallic voltage."; reference "ITU-T G.996.2 clause E.2.3.4 (MELT-CC-xx)"; } identity melt-fvdc { base measurement-class; description "The foreign DC voltage."; reference "ITU-T G.996.2 clause E.2.3.5 (MELT-FVDC-xx)"; } identity melt-fvac { base measurement-class; description "The foreign AC voltage."; reference "ITU-T G.996.2 clause E.2.3.5 (MELT-FVAC-xx)"; } identity melt-hc { base measurement-class; description "The loop capacitance."; reference "ITU-T G.996.2 clause E.2.3.6 (MELT-HC-xx)"; } identity melt-hdcr { base measurement-class; description "The loop resistance with high metallic voltage."; reference "ITU-T G.996.2 clause E.2.3.7 (MELT-HDCR-xx)"; } identity melt-ca { base measurement-class; description "The 3-element complex admittance with controlled metallic voltage."; reference "ITU-T G.996.2 clause E.2.3.9 (MELT-CAx-xx)"; } identity melt-ha { base measurement-class; description "The loop complex admittance with high metallic voltage."; reference "ITU-T G.996.2 clause E.2.3.10 (MELT-HAx-xx)"; } // typedefs typedef pmd-function { type enumeration { enum "measurement" { value 1; description "Triggers the Metallic Line Test Physical Medium Dependent (MELT-PMD) to start the test or tests specified by the measurement class (MELT-MCLASS)."; } enum "pair-identification-tone-generation" { value 2; description "Triggers the Metallic Line Test Physical Medium Dependent (MELT-PMD) to start a Pair Identification Tone (PIT) generation."; } } description "The MELT PMD function."; } typedef pmd-profile-ref { type leafref { path "/bbf-melt:melt/bbf-melt:profiles/bbf-melt:pmd-profile/bbf-melt:name"; } description "Used to reference a Physical Medium Dependent (PMD) profile."; } typedef pmd-result { type enumeration { enum "no-measurement-results-available" { value 0; description "No measurement results are available when no mesurement has been performed yet or after measurement results have been deleted."; } enum "measurement-failed-results-invalid" { value 1; description "The measurement results are invalid after the most recent measurement failed."; } enum "measurement-succeeded-results-valid" { value 2; description "The measurement results are valid after the most recent measurement succeeded."; } } description "The overall results of the Physical Medium Dependent (PMD) measurement."; reference "ITU-T G.996.2 clause E.3.4"; } typedef four-element-dc-resistance { type uint32 { range "0..10000000"; } units "ohms"; description "The 4-element DC resistances, RTR (Tip-to-Ring), RRT (Ring-to-Tip), RTG (Tip-to-Ground), and RRG (Ring-to-Ground), shall be represented in linear format. The range of valid values is from 0 to 10 megaohms with a granularity of 1 ohm."; reference "ITU-T G.996.2 clause E.2.3.1 (MELT-CDCR-TR, MELT-CDCR-RT, MELT-CDCR-TG, MELT-CDCR-RG)"; } typedef three-element-capacitance { type int32 { range "-20000..50000"; } units "0.1 nanofarads"; description "The 3-element capacitances, CTR (Tip-to-Ring), CTG (Tip-to-Ground), and CRG (Ring-to-Ground), shall be represented in linear format. The range of valid values is from -2 to 5 microfarads with a granularity of 0.1 nanofarads."; reference "ITU-T G.996.2 clause E.2.3.4 (MELT-CC-TR, MELT-CC-TG, MELT-CC-RG)"; } typedef foreign-dc-voltage { type int16 { range "-3500..3500"; } units "0.1 volts"; description "The range of valid values for the foreign DC voltages, VTR-DC (Tip-to-Ring), VTG-DC (Tip-to-Ground), and VRG-DC (Ring-to-Ground) is from -350 to 350 volts. The foreign DC voltage shall be represented in linear format with a granularity of 100 millivolts. The reported DC voltage polarity is defined with respect to ground for the VTG-DC and VRG-DC measurements and returns a positive result for the VTR-DC measurement if the tip wire is more positive than the ring wire."; reference "ITU-T G.996.2 clause E.2.3.5 (MELT-FVDC-TR, MELT-FVDC-TG, MELT-FVDC-RG)"; } typedef foreign-ac-voltage { type uint16 { range "0..2500"; } units "0.1 volts RMS"; description "The range of valid values for the foreign AC voltages VTR-AC (Tip-to-Ring), VTG-AC (Tip-to-Ground), and VRG-AC (Ring-To-Ground) is from 0 to 250 volts RMS. The foreign AC voltage shall be represented in linear format with a granularity of 100 millivolts."; reference "ITU-T G.996.2 clause E.2.3.5 (MELT-FVAC-TR, MELT-FVAC-TG, MELT-FVAC-RG)"; } typedef foreign-ac-voltage-frequency { type uint16 { range "100..900"; } units "0.1 Hz"; description "The range of valid values for the foreign AC voltage FTR-AC (Tip-to-Ring), FTG-AC (Tip-to-Ground), and FRG-AC (Ring-To-Ground) is from 10 to 90 Hz with a granularity of 0.1 Hz."; reference "ITU-T G.996.2 clause E.2.3.5 (MELT-FVACF-TR, MELT-FVACF-TG, MELT-FVACF-RG)"; } typedef loop-resistance { type uint32 { range "0..10000000"; } units "ohms"; description "The loop resistances RTF-HV (Tip-to-Ring) and RRT-HV (Ring-to-Tip) shall be represented in linear format. The range of valid values is from 0 to 10 megaohms with a granularity of 1 ohm. The RTR-HV and RRT-HV values of the loop resistance with high metallic voltage test are the total resistances measured. The RTR and RRT values obtained from the 3-element resistance with controlled metallic voltage test are not subtracted from the results."; reference "ITU-T G.996.2 clause E.2.3.7 (MELT-HDCR-TR, MELT-HDCR-RT)"; } typedef dc-test-voltage { type int16 { range "-1500..1500"; } units "0.1 volts"; description "The test voltages for the measurement of the 4-element DC resistance, VDCTR (Tip-to-Ring), VDCRT (Ring-to-Tip), VDCTG (Tip-to-Ground), and VDCRG (Ring-to-Ground), shall be represented in linear format. The range of valid values is from -150 V to +150 volts with a granularity of 0.1 volts."; reference "ITU-T G.996.2 clause E.2.3.2 (MELT-CDCV-TR, MELT-CDCV-RT, MELT-CDCV-TG, MELT-CDCV-RG)"; } typedef test-current { type int32 { range "-1000000..1000000"; } units "microamperes"; description "The test currents for the measurement of the 4-element DC resistance, IDCTR (Tip-to-Ring), IDCRT (Ring-to-Tip), IDCTG (Tip-to-Ground), and IDCRG (Ring-to-Ground), shall be represented in linear format. The range of valid values is from -1 A to +1 ampere with a granularity of 1 microampere."; reference "ITU-T G.996.2 clause E.2.3.3 (MELT-CDCI-TR, MELT-CDCI-RT, MELT-CDCI-TG, MELT-CDCI-RG)"; } typedef loop-resistance-test-voltage { type int16 { range "-1500..1500"; } units "0.1 volts"; description "The test voltages for the measurement of the loop resistance with a high metallic voltage, VDCHTR (Tip-to-Ring) and VDCHRT (Ring-to-Tip) shall be represented in linear format. The range of valid values is from -150 volts to +150 volts with a granularity of 0.1 volts."; reference "ITU-T G.996.2 clause E.2.3.8 (MELT-HDCV-TR, MELT-HDCV-RT)"; } typedef measurement-voltage { type uint16 { range "0..1500"; } units "0.1 volts"; description "The range of valid values for the AC voltages VACTR-CC (Tip-to-Ring), VACTG-CC (Tip-to-Ground), and VACRG-CC (Ring-to-Ground) for the 3-element capacitance test with a controlled metallic voltage is from 0 volts RMS to 150 volts RMS. The values shall be represented in linear format with a granularity of 0.1 volts. The range of valid values for the AC voltage VACTR-HC for the loop capacitance test with a high metallic voltage is from 0 volts RMS to 150 volts RMS. The values shall be represented in linear format with a granularity of 0.1 volts. The range of valid values for the AC voltages VACTR-CA, VACTG-CA, and VACRG-CA for the 3-element complex admittance test with a controlled metallic voltage is from 0 volts RMS to 150 volts RMS. The values shall be represented in linear format with a granularity of 0.1 volts. The range of valid values for the AC voltage VACTR-HA for the loop complex admittance test with a high metallic voltage is from 0 volts RMS to 150 volts RMS. The values shall be represented in linear format with a granularity of 0.1 volts."; reference "ITU-T G.996.2 clauses E.2.3.11 (MELT-ACV-CC-TR, MELT-ACV-CC-TG, MELT-ACV-CC-RG); E.2.3.12 (MELT-ACV-HC-TR); E.2.3.13 (MELT-ACV-CA-TR, MELT-ACV-CA-TG, MELT-ACV-CA-RG); E.2.3.14 (MELT-ACV-HA-TR); and E.2.2.3 (MELT-HCA-V)"; } typedef complex-admittance { type uint32 { range "1..1000000"; } units "0.1 microsiemens"; description "The range of valid values for the 3-element complex conductances and susceptances, GTR and BTR (Tip-to-Ring); GTG and BTG (Tip-to-Ground); and GRG and BRG (Ring-to-Ground) is from 0.1 microsiemens to 0.1 siemens. The values shall be represented in linear format with a granularity of 0.1 microsiemens. NOTE - The linear format is chosen for simplicity reason and does not imply any future accuracy requirements."; reference "ITU-T G.996.2 clause E.2.3.9 (MELT-CAG-TR, MELT-CAB-TR, MELT-CAG-TG, MELT-CAB-TG, MELT-CAG-RG, MELT-CAB-RG)"; } typedef loop-complex-admittance { type uint32 { range "1..1000000"; } units "0.1 microsiemens"; description "The range of valid values for the 3-element complex conductance and susceptance GTR,HV and BTR,HV (Tip-to-Ring) is from 0.1 microsiemens to 0.1 siemens. The values shall be represented in linear format with a granularity of 0.1 microsiemens. The GTR,HV and BTR,HV values of the loop complex admittance with high metallic voltage test are the total conductance and susceptance measured. The GTR and BTR values obtained from the 3-element complex admittance with controlled metallic voltage test are not subtracted from the results. NOTE - The linear format is chosen for simplicity reason and does not imply any future accuracy requirements."; reference "ITU-T G.996.2 clause E.2.3.10 (MELT-HAG-TR, MELT-HAB-TR)"; } typedef melt-pmd-measurement-parameter { type enumeration { enum "four-element-dc-resistance-tr" { value 0; description "The 4-element DC resistance with controlled metallic voltage, RTR (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.1 (MELT-CDCR-TR)"; } enum "four-element-dc-resistance-rt" { value 1; description "The 4-element DC resistance with controlled metallic voltage, RRT (Ring-to-Tip)."; reference "ITU-T G.996.2 clause E.2.3.1 (MELT-CDCR-RT)"; } enum "four-element-dc-resistance-tg" { value 2; description "The 4-element DC resistance with controlled metallic voltage, RTG (Tip-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.1 (MELT-CDCR-TG)"; } enum "four-element-dc-resistance-rg" { value 3; description "The 4-element DC resistance with controlled metallic voltage, RRG (Ring-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.1 (MELT-CDCR-RG)"; } enum "three-element-capacitance-tr" { value 4; description "The 3-element capacitance with controlled metallic voltage, CTR (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.4 (MELT-CC-TR)"; } enum "three-element-capacitance-tg" { value 5; description "The 3-element capacitance with controlled metallic voltage, CTG (Tip-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.4 (MELT-CC-TG)"; } enum "three-element-capacitance-rg" { value 6; description "The 3-element capacitance with controlled metallic voltage, CRG (Ring-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.4 (MELT-CC-RG)"; } enum "foreign-dc-voltage-tr" { value 7; description "The foreign DC voltage, VTR-DC (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.5 (MELT-FVDC-TR)"; } enum "foreign-dc-voltage-tg" { value 8; description "The foreign DC voltage, VTG-DC (Tip-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.5 (MELT-FVDC-TG)"; } enum "foreign-dc-voltage-rg" { value 9; description "The foreign DC voltage, VRG-DC (Ring-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.5 (MELT-FVDC-RG)"; } enum "foreign-ac-voltage-tr" { value 10; description "The foreign AC voltage, VTR-AC (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.5 (MELT-FVAC-TR)"; } enum "foreign-ac-voltage-tg" { value 11; description "The foreign AC voltage, VTG-AC (Tip-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.5 (MELT-FVAC-TG)"; } enum "foreign-ac-voltage-rg" { value 12; description "The foreign AC voltage, VRG-AC (Ring-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.5 (MELT-FVAC-RG)"; } enum "foreign-ac-voltage-frequency-tr" { value 13; description "The foreign AC voltage frequency for VTR-AC (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.5 (MELT-FVACF-TR)"; } enum "foreign-ac-voltage-frequency-tg" { value 14; description "The foreign AC voltage frequency for VTG-AC (Tip-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.5 (MELT-FVACF-TG)"; } enum "foreign-ac-voltage-frequency-rg" { value 15; description "The foreign AC voltage frequency for VRG-AC (Ring-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.5 (MELT-FVACF-RG)"; } enum "loop-capacitance-hv-tr" { value 16; description "The loop capacitance CTR-HV (Tip-to-Ring) shall be represented in linear format. The range of valid values is from 0 to 5 microfarads with a granularity of 0.1 nanofarads. The CTR-HV value of the loop capacitance with high metallic voltage test is the total capacitance measured. The CTR value obtained from the 3-element capacitance with controlled metallic voltage test is not subtracted from the results."; reference "ITU-T G.996.2 clause E.2.3.6 (MELT-HV-TR)"; } enum "loop-resistance-hv-tr" { value 17; description "The loop resistance with high metallic voltage, RTR-HV (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.7 (MELT-HDCR-TR)"; } enum "loop-resistance-hv-rt" { value 18; description "The loop resistance with high metallic voltage, RRT-HV (Ring-to-Tip)."; reference "ITU-T G.996.2 clause E.2.3.7 (MELT-HDCR-RT)"; } enum "four-element-dc-resistance-test-voltage-tr" { value 19; description "The DC test voltage for the measuremnt of 4-element DC resistance with a controlled metallic voltage VDC-TR (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.2 (MELT-CDCV-TR)"; } enum "four-element-dc-resistance-test-voltage-rt" { value 20; description "The DC test voltage for the measuremnt of 4-element DC resistance with a controlled metallic voltage VDC-RT (Ring-to-Tip)."; reference "ITU-T G.996.2 clause E.2.3.2 (MELT-CDCV-RT)"; } enum "four-element-dc-resistance-test-voltage-tg" { value 21; description "The DC test voltage for the measuremnt of 4-element DC resistance with a controlled metallic voltage VDC-TG (Tip-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.2 (MELT-CDCV-TG)"; } enum "four-element-dc-resistance-test-voltage-rg" { value 22; description "The DC test voltage for the measuremnt of 4-element DC resistance with a controlled metallic voltage VDC-RG (Ring-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.2 (MELT-CDCV-RG)"; } enum "four-element-dc-resistance-test-current-tr" { value 23; description "The test current for the measuremnt of 4-element DC resistance with a controlled metallic voltage IDC-TR (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.3 (MELT-CDCI-TR)"; } enum "four-element-dc-resistance-test-current-rt" { value 24; description "The test current for the measuremnt of 4-element DC resistance with a controlled metallic voltage IDC-RT (Ring-to-Tip)."; reference "ITU-T G.996.2 clause E.2.3.3 (MELT-CDCI-RT)"; } enum "four-element-dc-resistance-test-current-tg" { value 25; description "The test current for the measuremnt of 4-element DC resistance with a controlled metallic voltage IDC-TG (Tip-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.3 (MELT-CDCI-TG)"; } enum "four-element-dc-resistance-test-current-rg" { value 26; description "The test current for the measuremnt of 4-element DC resistance with a controlled metallic voltage IDC-RG (Ring-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.3 (MELT-CDCI-RG)"; } enum "loop-resistance-test-voltage-tr" { value 27; description "The test voltage for the measurement of the loop resistance with a high metallic voltage VDCH-TR (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.8 (MELT-HDCV-TR)"; } enum "loop-resistance-test-voltage-rt" { value 28; description "The test voltage for the measurement of the loop resistance with a high metallic voltage VDCH-RT (Ring-to-Tip)."; reference "ITU-T G.996.2 clause E.2.3.8 (MELT-HDCV-RT)"; } enum "three-element-complex-admittance-real-tr" { value 29; description "The real part of the 3-element complex admittance with controlled metallic voltage (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.9 (MELT-CAG-TR)"; } enum "three-element-complex-admittance-imaginary-tr" { value 30; description "The imaginary part of the 3-element complex admittance with controlled metallic voltage (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.9 (MELT-CAB-TR)"; } enum "three-element-complex-admittance-real-tg" { value 31; description "The real part of the 3-element complex admittance with controlled metallic voltage (Tip-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.9 (MELT-CAG-TG)"; } enum "three-element-complex-admittance-imaginary-tg" { value 32; description "The imaginary part of the 3-element complex admittance with controlled metallic voltage (Tip-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.9 (MELT-CAB-TG)"; } enum "three-element-complex-admittance-real-rg" { value 33; description "The real part of the 3-element complex admittance with controlled metallic voltage (Ring-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.9 (MELT-CAG-RG)"; } enum "three-element-complex-admittance-imaginary-rg" { value 34; description "The imaginary part of the 3-element complex admittance with controlled metallic voltage (Ring-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.9 (MELT-CAB-RG)"; } enum "loop-complex-admittance-real-hv-tr" { value 35; description "The real part of the loop complex admittance with high metallic voltage (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.10 (MELT-HAG-TR)"; } enum "loop-complex-admittance-imaginary-hv-tr" { value 36; description "The imaginary part of the loop complex admittance with high metallic voltage (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.10 (MELT-HAB-TR)"; } enum "three-element-capacitance-measurement-voltage-tr" { value 37; description "The AC voltage, VACTR-CC, for the 3-element capacitance test with a controlled metallic voltage (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.11 (MELT-ACV-CC-TR)"; } enum "three-element-capacitance-measurement-voltage-tg" { value 38; description "The AC voltage, VACTG-CC, for the 3-element capacitance test with a controlled metallic voltage (Tip-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.11 (MELT-ACV-CC-TG)"; } enum "three-element-capacitance-measurement-voltage-rg" { value 39; description "The AC voltage, VACRG-CC, for the 3-element capacitance test with a controlled metallic voltage (Ring-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.11 (MELT-ACV-CC-RG)"; } enum "loop-capacitance-measurement-voltage-tr" { value 40; description "The AC voltage, VACTR-HC, for the loop capacitance test with a high metallic voltage (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.12 (MELT-ACV-HC-TR)"; } enum "three-element-complex-admittance-measurement-voltage-tr" { value 41; description "The AC voltage, VACTR-CA, for the 3-element complex admittance test with a controlled metallic voltage (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.13 (MELT-ACV-CA-TR)"; } enum "three-element-complex-admittance-measurement-voltage-tg" { value 42; description "The AC voltage, VACTG-CA, for the 3-element complex admittance test with a controlled metallic voltage (Tip-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.13 (MELT-ACV-CA-TG)"; } enum "three-element-complex-admittance-measurement-voltage-rg" { value 43; description "The AC voltage, VACRG-CA, for the 3-element complex admittance test with a controlled metallic voltage (Ring-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.13 (MELT-ACV-CA-RG)"; } enum "loop-complex-admittance-measurement-voltage-tr" { value 44; description "The AC voltage, VACTR-HA, for the loop complex admittance test with a high metallic voltage (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.14 (MELT-ACV-HA-TR)"; } } description "An enumerated list of MELT PMD measurement parameters."; } typedef melt-pmd-reporting-parameter { type enumeration { enum "measurement-frequency" { value 0; description "This parameter is the measurement frequency for a 3-element capacitance measurement, if performed with a sinewave signal, or a for 3-element complex admittance measurement. The range of valid values is from 10 to 1000 Hz with a granularity of 1 Hz."; reference "ITU-T G.996.2 clause E.2.2.1 (MELT-MFREQ)"; } enum "foreign-voltage-input-impedance" { value 1; description "This parameter reports the nominal input impedance of the measuring instrument during foreign voltage tests. The range of valid values is from 0 to 10 megaohms with a granularity of 1 ohm."; reference "ITU-T G.996.2 clause E.2.2.2 (MELT-IMP-V)"; } enum "loop-complex-admittance-measurement-voltage" { value 2; description "This parameter is the peak amplitude of the differential sinewave used by the measurement of the loop complex admittance with a high voltage metallic test. The range of valid values is from 0 to 150 volts and it shall be represented in linear format with a granularity of 0.1 volts."; reference "ITU-T G.996.2 clauses E.1.1.7 and E.2.2.3 (MELT-HCA-V)"; } } description "An enumerated list of MELT PMD reporting parameters."; } typedef melt-processing-derived-parameter { type enumeration { enum "open-wire-failure-type" { value 0; description "This sub-parameter is a five state indication of the type of open wire failure defined as follows: 1) No open wire failure detected 2) Tip and ring wires open in equal distance 3) Tip wire open 4) Ring wire open 5) Undefined. NOTE - An error-free loop will be classified as failure state 2) in case that the remote end of the loop was left open during the measurement, or the connected Customer Premises Equipment (CPE) could not be detected (too low parallel CPE system capacitance)."; reference "ITU-T G.996.2 clause F.2.2.1.1 (MELT-O-WIRE-type)"; } enum "open-wire-failure-distance" { value 1; description "This parameter represents a best-effort estimate of the distance of the detected open wire failure from the measurement point, i.e., from the central office or of the total loop length if no failure is detected. A priori knowledge of the loop characteristics is required for reliable estimation of the distance. The range of valid values is from 0 to 10000 meters with a granularity of 1 meter."; reference "ITU-T G.996.2 clauses F.2.1.2 and F.2.2.1.2 (MELT-O-WIRE-DIST)"; } enum "short-circuit-failure-type" { value 2; description "This parameter is a six-state indication of the type of short circuit failure defined as follows: 1) No short circuit detected 2) Tip and ring wires shorted to GND 3) Tip wire shorted to GND 4) Ring wire shorted to GND 5) Tip and ring wires shorted to each other 6) Undefined."; reference "ITU-T G.996.2 clause F.2.2.2.1 (MELT-S-CCT-type)"; } enum "leakage-identification" { value 3; description "This parameter indicates a leakage to GND failure, classified into the following states: 1) No leakage detected 2) Tip and ring wire leaking to GND 3) Tip wire leaking to GND 4) Ring wire leaking to GND."; reference "ITU-T G.996.2 clause F.2.2.3 (MELT-LEAK-ID)"; } enum "resistive-fault-identification" { value 4; description "This parameter indicates a resistive fault to GND failure, classified into the following states: 1) No resistive fault detected 2) Resistive fault tip and ring to GND 3) Resistive fault tip to GND 4) Resistive fault ring to GND."; reference "ITU-T G.996.2 clause F.2.2.4 (MELT-RFAULT-ID)"; } enum "foreign-voltage-type-classification" { value 5; description "The foreign voltage impairment in the loop under test is classified into the following states: 1) No foreign voltage detected 2) 16 2/3 Hz AC voltage 3) 25 Hz AC voltage 4) 50 Hz AC voltage 5) 60 Hz AC voltage 6) POTS equipment (-48 volts DC) 7) ISDN equipment (-96 volts DC) 8) Undefined foreign voltage detected. This classification shall be done separately for both, the tip and the ring wire."; reference "ITU-T G.996.2 clause F.2.2.5.1 (MELT-FV-TYPE)"; } enum "foreign-voltage-level-classification" { value 6; description "This parameter provides a general classification of the foreign voltage into the following classes: 1) hazardous potential (e.g., power contact) 2) foreign electromotive force 3) other."; reference "ITU-T G.996.2 clause F.2.2.5.2 (MELT-FV-LEVEL)"; } enum "far-end-signature-topology-type-identification" { value 7; description "This parameter specifies the topology types of the detected far-end signature. Valid response values are: - no signature detected - unknown signature - signature type DR detected - signature type ZRC detected."; reference "ITU-T G.996.2 clause F.2.2.6.1 (MELT-FES-ID)"; } enum "cpe-identification-capacitive" { value 8; description "Customer Premises Equipment (CPE) detected shall be reported if the measured capacitance value CTR-Term is >= MELT-SYSC-CPE. CTR-Term shall represent the termination capacitance only. Therefore, the line capacitance shall be subtracted from the measured CTR value. For this equation to hold, the MELT-SYSC-CPE value should be derived from the nominal CPE capacitance by accounting for all tolerances and be set to the minimum possible measurement result."; reference "ITU-T G.996.2 clause F.2.2.7 (MELT-CPE-ID)"; } } description "An enumerated list of MELT processing derived parameters."; } // groupings grouping melt-pmd-control { description "Defines the parameters contained in the Physical Medium Dependent (PMD) control object."; choice pmd-functions { status deprecated; description "The method for enabling Physical Medium Dependent (PMD) functions. If no method is configured, the default behavior is equivalent to the presence of 'all-functions-disable'."; case all-functions-disable { status deprecated; leaf all-functions-disable { type empty; status deprecated; description "Disable all Physical Medium Dependent (PMD) control functions."; } } // case all-functions-disable case measurement-enable-c { status deprecated; leaf measurement-enable-c { type empty; status deprecated; description "Enables the test or tests specified by the measurement class (MELT-MCLASS)."; } } // case measurement-enable-c case pair-identification-tone-generation-enable { status deprecated; leaf pair-identification-tone-generation-enable { type empty; status deprecated; description "Enables pair identification tone generation."; } } // case pair-identification-tone-generation-enable } // choice pmd-functions } // grouping melt-pmd-control grouping pmd-control { description "Physical Medium Dependent (PMD) control functions."; leaf pmd-control { type enumeration { enum "disable" { value 0; description "The Metallic Line Test Physical Medium Dependent (MELT-PMD) functionality is not configured for a measurement or Pair Identification Tone (PIT) generation."; } enum "enable" { value 1; description "The Metallic Line Test Physical Medium Dependent (MELT-PMD) functionality is configured for a measurement or Pair Identification Tone (PIT) generation."; } } default "disable"; description "This parameter configures the Metallic Line Test Physical Medium Dependent (MELT-PMD) for a MELT measurement or Pair Identification Tone (PIT) generation."; } action request-pmd-function-c { description "Requests to disable or enable PMD functions."; input { leaf pmd-function { type union { type enumeration { enum "abort" { value 0; description "Triggers the Metallic Line Test Physical Medium Dependent (MELT-PMD) to abort any ongoing measurement or Pair Identification Tone (PIT) generation."; } } type pmd-function; } description "A measurement or Pair Identification Tone (PIT) generation is by default not triggered. A measurement or PIT generation is triggered when the action is sent with the appropriate function specified. One or more measurements or PIT generations may be triggered while the Metallic Line Test Physical Medium Dependent (MELT-PMD) is configured 'enable', possibly with different MELT PMD configuration parameters. If the triggered measurement or PIT generation cannot be executed, then the Access Node/Distribution Point Unit (AN/DPU) Management Entitiy (ME) rejects this action and the MELT PMD status remains 'inactive'."; } } } // rpc request-pmd-function-c } // grouping pmd-control grouping pmd-profile { description "Defines the parameters contained in a Physical Medium Dependent (PMD) profile."; leaf peak-metallic-voltage-tr { type uint8 { range "0..150"; } units "volts"; description "This parameter defines the peak metallic voltage which must not be exceeded in any active measurement applying a metallic voltage between tip and ring in order not to conduct current in a non-linear termination located at the far-end during the measurement. The range of valid values is from 0 to 150 volts with a granularity of 1 volts. In the case of a test performed with a sinewave signal, it applies to the peak of the sinewave, not to its RMS value."; reference "ITU-T G.996.2 clause E.2.1.2 (MELT-PV)"; } leaf pair-identification-tone-frequency { type uint16 { range "300..3400"; } units "Hz"; description "This parameter sets up frequency of the pair identification tone as defined in clause E.1.2.1. The range of frequencies is from 300 to 3400 Hz in granularity of 1 Hz. The supported set of frequencies is at the vendor's discretion."; reference "ITU-T G.996.2 clause E.2.1.4 (MELT-PIT-F)"; } leaf pair-identification-tone-timeout { type uint16 { range "1..65535"; } units "seconds"; description "This parameter specifies the duration of the pair identification tone. After timeout the pair identification tone is deactivated automatically, if not deactivated manually before (abort)."; reference "ITU-T G.996.2 clause E.2.1.5 (MELT-PIT-T)"; } leaf maximum-far-end-signature-conductive-voltage { type uint16 { range "0..500"; } units "0.1 volts"; description "This parameter specifies the maximum conduction voltage level of an expected far-end signature. It defines the minimum metallic voltage required for all measurements with a high metallic voltage between tip and ring in order to conduct current in a far-end signature during the measurement. The range of valid values is from 0 to 50 volts with a granularity of 0.1 volts."; reference "ITU-T G.996.2 clause E.2.1.5 (MELT-MAXFE-SCV)"; } leaf minimum-far-end-signature-conductive-voltage { type uint16 { range "0..500"; } units "0.1 volts"; description "This parameter specifies the minimum conduction voltage level of an expected far-end signature. It defines the maximum metallic voltage allowed for all measurements with a controlled metallic voltage between tip and ring in order not to conduct current in a far-end signature during the measurement. The range of valid values is from 0 to 50 volts with a granularity of 0.1 volts. In the case of a measurement performed with a sinewave signal, it applies to the peak of the sinewave, not to its RMS value."; reference "ITU-T G.996.2 clause E.2.1.6 (MELT-MINFE-SCV)"; } leaf-list measurement-class { type identityref { base measurement-class; } ordered-by user; description "This parameter defines the list of measurements to be executed. It shall support a single measurement or a set of MELT measurements in a consecutive manner. The measurements of interest are selected via a flag register, or equivalent. If no elements exist, no measurements will be executed."; reference "ITU-T G.996.2 clause E.2.1.1 (MELT-MCLASS)"; } leaf signal-frequency-for-active-ac-tests { type uint16 { range "10..1000"; } units "Hz"; description "This parameter controls the frequency used during the 3-element capacitance test, if performed with a sinewave signal, and during the 3-element complex admittance test. This parameter shall be represented in linear format with values from 10 to 1000 Hz with a granularity of 1 Hz. The supported set of frequencies is at the vendor's discretion with an option to operate in automatic mode for which the testing routine will select the frequency on its own."; reference "ITU-T G.996.2 clause E.2.1.3 (MELT-AC-F)"; } } // grouping pmd-profile grouping processing-profile { description "Defines the parameters contained in a processing profile."; container loop-resistance-classification-threshold { description "This parameter defines the limits for classification of the resistances to ground (GND) of the loop under test. The following limit values need to be defined: - maximum resistance for a short-circuit to GND; - minimum resistance for a leakage to GND; - maximum resistance for a leakage to GND. A resistance to ground measured as being: - Below the maximum resistance for a short circuit shall be interpreted as a short circuit to GND. - Above the maximum resistance for a short circuit and below the minimum resistance for a leakage shall be interpreted as a resistance fault to GND. - Above the minimum resistance for a leakage and below the maximum resistance for a leakage shall be interpreted as a leakage to GND. - Above the maximum resistance for a leakage shall be interpreted as a high impedance to GND."; reference "ITU-T G.996.2 clause F.2.1.1 (MELT-LRC-TH)"; leaf maximum-resistance-short-circuit-to-ground { type uint32; units "0.1 kiloohms"; description "The maximum resistance threshold for a short circuit to ground."; } leaf minimum-resistance-leakage-to-ground { type uint32; units "0.1 kiloohms"; description "The minimum resistance threshold for a leakage to ground."; } leaf maximum-resistance-leakage-to-ground { type uint32; units "0.1 kiloohms"; description "The maximum resistance threshold for a leakage to ground."; } } // container loop-resistance-classification-threshold container loop-parameters-per-unit-length { description "The a priori knowledge of some characteristic parameters per Unit length of the loop under test is necessary to derive length or distance information from the Metallic Line Test Physical Medium Dependent (MELT-PMD) measurements. This parameter combines the set of required loop parameters: 1) Cable characteristic capacitance per unit length between tip and ring. The range of valid values is from 0 to 100 nanofarads per kilometer with a granularity of 0.1 nanofarads per kilometer. 2) Cable characteristic capacitance per unit length between tip and GND and ring and GND. The range of valid values is from 0 to 100 nanofarads per kilometer with a granularity of 0.1 nanofarads per kilometer. 3) Cable loop DC resistance per unit length (sum of both wires). The range of valid values is from 50 to 400 ohms per kilometer with a granularity of 1 ohm per kilometer."; reference "ITU-T G.996.2 clause F.2.1.2 (MELT-LOOP-PARAMS)"; leaf capacitance-per-unit-length-tr { type uint16 { range "0..1000"; } units "0.1 nanofarads per kilometer"; description "Cable characteristic capacitance per unit length between tip and ring. The range of valid values is from 0 to 100 nanofarads per kilometer with a granularity of 0.1 nanofarads per kilometer."; } leaf capacitance-per-unit-length-tg-rg { type uint16 { range "0..1000"; } units "0.1 nanofarads per kilometer"; description "Cable characteristic capacitance per unit length between tip and ground (GND) and ring and GND. The range of valid values is from 0 to 100 nanofarads per kilometer with a granularity of 0.1 nanofarads per kilometer."; } leaf dc-resistance-per-unit-length { type uint16 { range "50..400"; } units "ohms per kilometer"; description "Cable loop DC resistance per unit length (sum of both wires). The range of valid values is from 50 to 400 ohms per kilometer with a granularity of 1 ohm per kilometer."; } } // container loop-parameters-per-unit-length leaf hazardous-dc-voltage-level { type uint8 { range "0..200"; } units "volts"; description "This parameter defines the level above which DC voltage shall be identified as hazardous. The hazardous voltage level shall be configurable between 0 and 200 volts with a granularity of 1 volt."; reference "ITU-T G.996.2 clause F.2.1.3 (MELT-HDCV-L)"; } leaf hazardous-ac-voltage-level { type uint8 { range "0..200"; } units "volts RMS"; description "This parameter defines the level above which AC voltage shall be identified as hazardous. The hazardous voltage level shall be configurable between 0 and 200 volts RMS with a granularity of 1 volt RMS."; reference "ITU-T G.996.2 clause F.2.1.4 (MELT-HACV-L)"; } leaf foreign-emf-dc-voltage-level { type uint8 { range "0..50"; } units "volts"; description "This parameter defines the level above which a DC voltage shall be identified as a foreign Electromagnetic Field (EMF). The foreign EMF voltage level shall be configurable between 0 and 50 volts with a granularity of 1 volt."; reference "ITU-T G.996.2 clause F.2.1.5 (MELT-FDCV-L)"; } leaf foreign-emf-ac-voltage-level { type uint8 { range "0..50"; } units "volts RMS"; description "This parameter defines the level above which an AC voltage shall be identified as a foreign Electromagnetic Field (EMF). The foreign EMF voltage level shall be configurable between 0 and 50 volts RMS with a granularity of 1 volt RMS."; reference "ITU-T G.996.2 clause F.2.1.6 (MELT-FACV-L)"; } leaf system-capacitance-cpe-side { type uint16 { range "0..20000"; } units "0.1 nanofarads"; description "This parameter is the expected value of the system capacitance at the Customer Premises Equipment (CPE) side as it appears in parallel between tip and ring in a corresponding Metallic Line Test (MELT) measurement. A priori knowledge of this capacitance improves accuracy of the results and offers additional degrees for interpretation. The range of valid values is from 0 to 2 microfarads with a granularity of 0.1 nanofarads."; reference "ITU-T G.996.2 clause F.2.1.7 (MELT-SYSC-CPE)"; } } // grouping processing-profile grouping pmd-status { description "Status parameters for the Physical Medium Dependent (PMD) object."; leaf melt-status-c { type enumeration { enum "inactive" { value 0; description "The Metallic Line Test (MELT) functionality is inactive."; } enum "measurement-ongoing" { value 1; description "The measurement is ongoing."; } enum "pit-generation-ongoing" { value 2; description "The Pair Identifiation Tone (PIT) is ongoing."; } } description "The status of the Metallic Line Test Physical Medium Dependent (MELT-PMD) measurement. Upon the MELT PMD request triggering a measurement, the MELT PMD status shall become 'measurement-ongoing' if the measurement is executed. Upon the MELT PMD request triggering a Pair Identification Tone (PIT) generation, the MELT PMD status shall become 'pit-ongoing' if the PIT generation is executed. Upon abortion or successful completion of the measurement or PIT generation, the MELT PMD status shall become 'inactive' and the Access Node (AN)/Distrubution Point Unit (DPU) Maintenance Entity (ME) shall send a notification to the Network Management System (NMS)."; reference "ITU-T G.996.2 clause E.3.3"; } leaf melt-results-c { type pmd-result; description "The overall results of the Metallic Line Test Physical Medium Dependent (MELT-PMD) measurement."; reference "ITU-T G.996.2 clause E.3.4"; } leaf results-timestamp { type yang:date-and-time; description "The time stamp contains the time when results of last measurement test were stored."; reference "ITU-T G.996.2 clause E.2.2.5"; } } // grouping pmd-status grouping pmd-measurement-parameters { description "Defines the Metallic Line Test Physical Medium Dependent (MELT-PMD) measurement parameters."; leaf four-element-dc-resistance-tr { type four-element-dc-resistance; description "The 4-element DC resistance with controlled metallic voltage, RTR (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.1 (MELT-CDCR-TR)"; } leaf four-element-dc-resistance-rt { type four-element-dc-resistance; description "The 4-element DC resistance with controlled metallic voltage, RRT (Ring-to-Tip)."; reference "ITU-T G.996.2 clause E.2.3.1 (MELT-CDCR-RT)"; } leaf four-element-dc-resistance-tg { type four-element-dc-resistance; description "The 4-element DC resistance with controlled metallic voltage, RTG (Tip-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.1 (MELT-CDCR-TG)"; } leaf four-element-dc-resistance-rg { type four-element-dc-resistance; description "The 4-element DC resistance with controlled metallic voltage, RRG (Ring-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.1 (MELT-CDCR-RG)"; } leaf three-element-capacitance-tr { type three-element-capacitance; description "The 3-element capacitance with controlled metallic voltage, CTR (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.4 (MELT-CC-TR)"; } leaf three-element-capacitance-tg { type three-element-capacitance; description "The 3-element capacitance with controlled metallic voltage, CTG (Tip-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.4 (MELT-CC-TG)"; } leaf three-element-capacitance-rg { type three-element-capacitance; description "The 3-element capacitance with controlled metallic voltage, CRG (Ring-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.4 (MELT-CC-RG)"; } leaf foreign-dc-voltage-tr { type foreign-dc-voltage; description "The foreign DC voltage, VTR-DC (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.5 (MELT-FVDC-TR)"; } leaf foreign-dc-voltage-tg { type foreign-dc-voltage; description "The foreign DC voltage, VTG-DC (Tip-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.5 (MELT-FVDC-TG)"; } leaf foreign-dc-voltage-rg { type foreign-dc-voltage; description "The foreign DC voltage, VRG-DC (Ring-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.5 (MELT-FVDC-RG)"; } leaf foreign-ac-voltage-tr { type foreign-ac-voltage; description "The foreign AC voltage, VTR-AC (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.5 (MELT-FVAC-TR)"; } leaf foreign-ac-voltage-tg { type foreign-ac-voltage; description "The foreign AC voltage, VTG-AC (Tip-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.5 (MELT-FVAC-TG)"; } leaf foreign-ac-voltage-rg { type foreign-ac-voltage; description "The foreign AC voltage, VRG-AC (Ring-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.5 (MELT-FVAC-RG)"; } leaf foreign-ac-voltage-frequency-tr { type foreign-ac-voltage-frequency; description "The foreign AC voltage frequency for VTR-AC (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.5 (MELT-FVACF-TR)"; } leaf foreign-ac-voltage-frequency-tg { type foreign-ac-voltage-frequency; description "The foreign AC voltage frequency for VTG-AC (Tip-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.5 (MELT-FVACF-TG)"; } leaf foreign-ac-voltage-frequency-rg { type foreign-ac-voltage-frequency; description "The foreign AC voltage frequency for VRG-AC (Ring-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.5 (MELT-FVACF-RG)"; } leaf loop-capacitance-hv-tr { type int32 { range "-20000..50000"; } units "0.1 nanofarads"; description "The loop capacitance CTR-HV (Tip-to-Ring) shall be represented in linear format. The range of valid values is from -2 to 5 microfarads with a granularity of 0.1 nanofarads. The CTR-HV value of the loop capacitance with high metallic voltage test is the total capacitance measured. The CTR value obtained from the 3-element capacitance with controlled metallic voltage test is not subtracted from the results."; reference "ITU-T G.996.2 clause E.2.3.6 (MELT-HV-TR)"; } leaf loop-resistance-hv-tr { type loop-resistance; description "The loop resistance with high metallic voltage, RTR-HV (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.7 (MELT-HDCR-TR)"; } leaf loop-resistance-hv-rt { type loop-resistance; description "The loop resistance with high metallic voltage, RRT-HV (Ring-to-Tip)."; reference "ITU-T G.996.2 clause E.2.3.7 (MELT-HDCR-RT)"; } leaf four-element-dc-resistance-test-voltage-tr { type dc-test-voltage; description "The DC test voltage for the measuremnt of 4-element DC resistance with a controlled metallic voltage VDC-TR (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.2 (MELT-CDCV-TR)"; } leaf four-element-dc-resistance-test-voltage-rt { type dc-test-voltage; description "The DC test voltage for the measuremnt of 4-element DC resistance with a controlled metallic voltage VDC-RT (Ring-to-Tip)."; reference "ITU-T G.996.2 clause E.2.3.2 (MELT-CDCV-RT)"; } leaf four-element-dc-resistance-test-voltage-tg { type dc-test-voltage; description "The DC test voltage for the measuremnt of 4-element DC resistance with a controlled metallic voltage VDC-TG (Tip-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.2 (MELT-CDCV-TG)"; } leaf four-element-dc-resistance-test-voltage-rg { type dc-test-voltage; description "The DC test voltage for the measuremnt of 4-element DC resistance with a controlled metallic voltage VDC-RG (Ring-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.2 (MELT-CDCV-RG)"; } leaf four-element-dc-resistance-test-current-tr { type test-current; description "The test current for the measuremnt of 4-element DC resistance with a controlled metallic voltage IDC-TR (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.3 (MELT-CDCI-TR)"; } leaf four-element-dc-resistance-test-current-rt { type test-current; description "The test current for the measuremnt of 4-element DC resistance with a controlled metallic voltage IDC-RT (Ring-to-Tip)."; reference "ITU-T G.996.2 clause E.2.3.3 (MELT-CDCI-RT)"; } leaf four-element-dc-resistance-test-current-tg { type test-current; description "The test current for the measuremnt of 4-element DC resistance with a controlled metallic voltage IDC-TG (Tip-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.3 (MELT-CDCI-TG)"; } leaf four-element-dc-resistance-test-current-rg { type test-current; description "The test current for the measuremnt of 4-element DC resistance with a controlled metallic voltage IDC-RG (Ring-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.3 (MELT-CDCI-RG)"; } leaf loop-resistance-test-voltage-tr { type loop-resistance-test-voltage; description "The test voltage for the measurement of the loop resistance with a high metallic voltage VDCH-TR (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.8 (MELT-HDCV-TR)"; } leaf loop-resistance-test-voltage-rt { type loop-resistance-test-voltage; description "The test voltage for the measurement of the loop resistance with a high metallic voltage VDCH-RT (Ring-to-Tip)."; reference "ITU-T G.996.2 clause E.2.3.8 (MELT-HDCV-RT)"; } leaf three-element-complex-admittance-real-tr { type complex-admittance; description "The real part of the 3-element complex admittance with controlled metallic voltage (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.9 (MELT-CAG-TR)"; } leaf three-element-complex-admittance-imaginary-tr { type complex-admittance; description "The imaginary part of the 3-element complex admittance with controlled metallic voltage (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.9 (MELT-CAB-TR)"; } leaf three-element-complex-admittance-real-tg { type complex-admittance; description "The real part of the 3-element complex admittance with controlled metallic voltage (Tip-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.9 (MELT-CAG-TG)"; } leaf three-element-complex-admittance-imaginary-tg { type complex-admittance; description "The imaginary part of the 3-element complex admittance with controlled metallic voltage (Tip-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.9 (MELT-CAB-TG)"; } leaf three-element-complex-admittance-real-rg { type complex-admittance; description "The real part of the 3-element complex admittance with controlled metallic voltage (Ring-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.9 (MELT-CAG-RG)"; } leaf three-element-complex-admittance-imaginary-rg { type complex-admittance; description "The imaginary part of the 3-element complex admittance with controlled metallic voltage (Ring-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.9 (MELT-CAB-RG)"; } leaf loop-complex-admittance-real-hv-tr { type loop-complex-admittance; description "The real part of the loop complex admittance with high metallic voltage (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.10 (MELT-HAG-TR)"; } leaf loop-complex-admittance-imaginary-hv-tr { type loop-complex-admittance; description "The imaginary part of the loop complex admittance with high metallic voltage (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.10 (MELT-HAB-TR)"; } leaf three-element-capacitance-measurement-voltage-tr { type measurement-voltage; description "The range of valid values for the AC voltage VACTR-CC for the 3-element capacitance test with a controlled metallic voltage is from 0 volts RMS to 150 volts RMS. The values shall be represented in linear format with a granularity of 0.1 volts."; reference "ITU-T G.996.2 clause E.2.3.11 (MELT-ACV-CC-TR)"; } leaf three-element-capacitance-measurement-voltage-tg { type measurement-voltage; description "The range of valid values for the AC voltage VACTG-CC for the 3-element capacitance test with a controlled metallic voltage is from 0 volts RMS to 150 volts RMS. The values shall be represented in linear format with a granularity of 0.1 volts."; reference "ITU-T G.996.2 clause E.2.3.11 (MELT-ACV-CC-TG)"; } leaf three-element-capacitance-measurement-voltage-rg { type measurement-voltage; description "The range of valid values for the AC voltage VACRG-CC for the 3-element capacitance test with a controlled metallic voltage is from 0 volts RMS to 150 volts RMS. The values shall be represented in linear format with a granularity of 0.1 volts."; reference "ITU-T G.996.2 clause E.2.3.11 (MELT-ACV-CC-RG)"; } leaf loop-capacitance-measurement-voltage-tr { type measurement-voltage; description "The range of valid values for the AC voltage VACTR-HC for the loop capacitance test with a high metallic voltage is from 0 volts RMS to 150 volts RMS. The values shall be represented in linear format with a granularity of 0.1 volts."; reference "ITU-T G.996.2 clause E.2.3.12 (MELT-ACV-HC-TR)"; } leaf three-element-complex-admittance-measurement-voltage-tr { type measurement-voltage; description "The range of valid values for the AC voltage VACTR-CA for the 3-element complex admittance test with a controlled metallic voltage is from 0 volts RMS to 150 volts RMS. The values shall be represented in linear format with a granularity of 0.1 volts."; reference "ITU-T G.996.2 clause E.2.3.13 (MELT-ACV-CA-TR)"; } leaf three-element-complex-admittance-measurement-voltage-tg { type measurement-voltage; description "The range of valid values for the AC voltage VACTG-CA for the 3-element complex admittance test with a controlled metallic voltage is from 0 V RMS to 150 V RMS. The values shall be represented in linear format with a granularity of 0.1 V."; reference "ITU-T G.996.2 clause E.2.3.13 (MELT-ACV-CA-TG)"; } leaf three-element-complex-admittance-measurement-voltage-rg { type measurement-voltage; description "The range of valid values for the AC voltage VACRG-CA for the 3-element complex admittance test with a controlled metallic voltage is from 0 volts RMS to 150 volts RMS. The values shall be represented in linear format with a granularity of 0.1 volts."; reference "ITU-T G.996.2 clause E.2.3.13 (MELT-ACV-CA-RG)"; } leaf loop-complex-admittance-measurement-voltage-tr { type measurement-voltage; description "The range of valid values for the AC voltage VACTR-HA for the loop complex admittance test with a high metallic voltage is from 0 volts RMS to 150 volts RMS. The values shall be represented in linear format with a granularity of 0.1 volts."; reference "ITU-T G.996.2 clause E.2.3.14 (MELT-ACV-HA-TR)"; } leaf unreliability-indicator { if-feature bbf-melt:melt-pmd-measurement-parameter-reliability; type bits { bit four-element-dc-resistance-tr { position 0; description "The 4-element DC resistance with controlled metallic voltage, RTR (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.1 (MELT-CDCR-TR)"; } bit four-element-dc-resistance-rt { position 1; description "The 4-element DC resistance with controlled metallic voltage, RRT (Ring-to-Tip)."; reference "ITU-T G.996.2 clause E.2.3.1 (MELT-CDCR-RT)"; } bit four-element-dc-resistance-tg { position 2; description "The 4-element DC resistance with controlled metallic voltage, RTG (Tip-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.1 (MELT-CDCR-TG)"; } bit four-element-dc-resistance-rg { position 3; description "The 4-element DC resistance with controlled metallic voltage, RRG (Ring-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.1 (MELT-CDCR-RG)"; } bit three-element-capacitance-tr { position 4; description "The 3-element capacitance with controlled metallic voltage, CTR (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.4 (MELT-CC-TR)"; } bit three-element-capacitance-tg { position 5; description "The 3-element capacitance with controlled metallic voltage, CTG (Tip-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.4 (MELT-CC-TG)"; } bit three-element-capacitance-rg { position 6; description "The 3-element capacitance with controlled metallic voltage, CRG (Ring-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.4 (MELT-CC-RG)"; } bit foreign-dc-voltage-tr { position 7; description "The foreign DC voltage, VTR-DC (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.5 (MELT-FVDC-TR)"; } bit foreign-dc-voltage-tg { position 8; description "The foreign DC voltage, VTG-DC (Tip-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.5 (MELT-FVDC-TG)"; } bit foreign-dc-voltage-rg { position 9; description "The foreign DC voltage, VRG-DC (Ring-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.5 (MELT-FVDC-RG)"; } bit foreign-ac-voltage-tr { position 10; description "The foreign AC voltage, VTR-AC (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.5 (MELT-FVAC-TR)"; } bit foreign-ac-voltage-tg { position 11; description "The foreign AC voltage, VTG-AC (Tip-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.5 (MELT-FVAC-TG)"; } bit foreign-ac-voltage-rg { position 12; description "The foreign AC voltage, VRG-AC (Ring-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.5 (MELT-FVAC-RG)"; } bit foreign-ac-voltage-frequency-tr { position 13; description "The foreign AC voltage frequency for VTR-AC (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.5 (MELT-FVACF-TR)"; } bit foreign-ac-voltage-frequency-tg { position 14; description "The foreign AC voltage frequency for VTG-AC (Tip-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.5 (MELT-FVACF-TG)"; } bit foreign-ac-voltage-frequency-rg { position 15; description "The foreign AC voltage frequency for VRG-AC (Ring-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.5 (MELT-FVACF-RG)"; } bit loop-capacitance-hv-tr { position 16; description "The loop capacitance CTR-HV (Tip-to-Ring) shall be represented in linear format. The range of valid values is from 0 to 5 microfarads with a granularity of 0.1 nanofarads. The CTR-HV value of the loop capacitance with high metallic voltage test is the total capacitance measured. The CTR value obtained from the 3-element capacitance with controlled metallic voltage test is not subtracted from the results."; reference "ITU-T G.996.2 clause E.2.3.6 (MELT-HV-TR)"; } bit loop-resistance-hv-tr { position 17; description "The loop resistance with high metallic voltage, RTR-HV (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.7 (MELT-HDCR-TR)"; } bit loop-resistance-hv-rt { position 18; description "The loop resistance with high metallic voltage, RRT-HV (Ring-to-Tip)."; reference "ITU-T G.996.2 clause E.2.3.7 (MELT-HDCR-RT)"; } bit four-element-dc-resistance-test-voltage-tr { position 19; description "The DC test voltage for the measuremnt of 4-element DC resistance with a controlled metallic voltage VDC-TR (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.2 (MELT-CDCV-TR)"; } bit four-element-dc-resistance-test-voltage-rt { position 20; description "The DC test voltage for the measuremnt of 4-element DC resistance with a controlled metallic voltage VDC-RT (Ring-to-Tip)."; reference "ITU-T G.996.2 clause E.2.3.2 (MELT-CDCV-RT)"; } bit four-element-dc-resistance-test-voltage-tg { position 21; description "The DC test voltage for the measuremnt of 4-element DC resistance with a controlled metallic voltage VDC-TG (Tip-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.2 (MELT-CDCV-TG)"; } bit four-element-dc-resistance-test-voltage-rg { position 22; description "The DC test voltage for the measuremnt of 4-element DC resistance with a controlled metallic voltage VDC-RG (Ring-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.2 (MELT-CDCV-RG)"; } bit four-element-dc-resistance-test-current-tr { position 23; description "The test current for the measuremnt of 4-element DC resistance with a controlled metallic voltage IDC-TR (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.3 (MELT-CDCI-TR)"; } bit four-element-dc-resistance-test-current-rt { position 24; description "The test current for the measuremnt of 4-element DC resistance with a controlled metallic voltage IDC-RT (Ring-to-Tip)."; reference "ITU-T G.996.2 clause E.2.3.3 (MELT-CDCI-RT)"; } bit four-element-dc-resistance-test-current-tg { position 25; description "The test current for the measuremnt of 4-element DC resistance with a controlled metallic voltage IDC-TG (Tip-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.3 (MELT-CDCI-TG)"; } bit four-element-dc-resistance-test-current-rg { position 26; description "The test current for the measuremnt of 4-element DC resistance with a controlled metallic voltage IDC-RG (Ring-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.3 (MELT-CDCI-RG)"; } bit loop-resistance-test-voltage-tr { position 27; description "The test voltage for the measurement of the loop resistance with a high metallic voltage VDCH-TR (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.8 (MELT-HDCV-TR)"; } bit loop-resistance-test-voltage-rt { position 28; description "The test voltage for the measurement of the loop resistance with a high metallic voltage VDCH-RT (Ring-to-Tip)."; reference "ITU-T G.996.2 clause E.2.3.8 (MELT-HDCV-RT)"; } bit three-element-complex-admittance-real-tr { position 29; description "The real part of the 3-element complex admittance with controlled metallic voltage (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.9 (MELT-CAG-TR)"; } bit three-element-complex-admittance-imaginary-tr { position 30; description "The imaginary part of the 3-element complex admittance with controlled metallic voltage (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.9 (MELT-CAB-TR)"; } bit three-element-complex-admittance-real-tg { position 31; description "The real part of the 3-element complex admittance with controlled metallic voltage (Tip-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.9 (MELT-CAG-TG)"; } bit three-element-complex-admittance-imaginary-tg { position 32; description "The imaginary part of the 3-element complex admittance with controlled metallic voltage (Tip-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.9 (MELT-CAB-TG)"; } bit three-element-complex-admittance-real-rg { position 33; description "The real part of the 3-element complex admittance with controlled metallic voltage (Ring-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.9 (MELT-CAG-RG)"; } bit three-element-complex-admittance-imaginary-rg { position 34; description "The imaginary part of the 3-element complex admittance with controlled metallic voltage (Ring-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.9 (MELT-CAB-RG)"; } bit loop-complex-admittance-real-hv-tr { position 35; description "The real part of the loop complex admittance with high metallic voltage (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.10 (MELT-HAG-TR)"; } bit loop-complex-admittance-imaginary-hv-tr { position 36; description "The imaginary part of the loop complex admittance with high metallic voltage (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.10 (MELT-HAB-TR)"; } bit three-element-capacitance-measurement-voltage-tr { position 37; description "The AC voltage, VACTR-CC, for the 3-element capacitance test with a controlled metallic voltage (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.11 (MELT-ACV-CC-TR)"; } bit three-element-capacitance-measurement-voltage-tg { position 38; description "The AC voltage, VACTG-CC, for the 3-element capacitance test with a controlled metallic voltage (Tip-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.11 (MELT-ACV-CC-TG)"; } bit three-element-capacitance-measurement-voltage-rg { position 39; description "The AC voltage, VACRG-CC, for the 3-element capacitance test with a controlled metallic voltage (Ring-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.11 (MELT-ACV-CC-RG)"; } bit loop-capacitance-measurement-voltage-tr { position 40; description "The AC voltage, VACTR-HC, for the loop capacitance test with a high metallic voltage (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.12 (MELT-ACV-HC-TR)"; } bit three-element-complex-admittance-measurement-voltage-tr { position 41; description "The AC voltage, VACTR-CA, for the 3-element complex admittance test with a controlled metallic voltage (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.13 (MELT-ACV-CA-TR)"; } bit three-element-complex-admittance-measurement-voltage-tg { position 42; description "The AC voltage, VACTG-CA, for the 3-element complex admittance test with a controlled metallic voltage (Tip-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.13 (MELT-ACV-CA-TG)"; } bit three-element-complex-admittance-measurement-voltage-rg { position 43; description "The AC voltage, VACRG-CA, for the 3-element complex admittance test with a controlled metallic voltage (Ring-to-Ground)."; reference "ITU-T G.996.2 clause E.2.3.13 (MELT-ACV-CA-RG)"; } bit loop-complex-admittance-measurement-voltage-tr { position 44; description "The AC voltage, VACTR-HA, for the loop complex admittance test with a high metallic voltage (Tip-to-Ring)."; reference "ITU-T G.996.2 clause E.2.3.14 (MELT-ACV-HA-TR)"; } } description "The unreliability indicator provides the set of parameters whose data can be considered to be unreliable. Possible reasons that the data is unreliable: - The measurement may not have been able to run, possibly due to external conditions. - The result is not reliable as the accuracy may be degraded due to external conditions."; reference "ITU-T G.996.2 clause E.2.2.15 (Reliability indicator)"; } container melt-pmd-measurement-vendor-specific-status { if-feature bbf-melt:melt-pmd-measurement-parameter-reliability; description "Vendor specific status associated with each MELT measurement test."; list status { key "parameter"; description "A list of per parameter test status."; leaf parameter { type melt-pmd-measurement-parameter; description "The MELT PMD measurement parameter."; } leaf message { type string; description "Vendor specific status message for each of the MELT PMD measurement parameters."; } } // list status } // container melt-pmd-measurement-vendor-specific-status } // grouping pmd-measurement-parameters grouping pmd-reporting-parameters { description "Defines the Metallic Line Test Physical Medium Dependent (MELT-PMD) reporting parameters."; leaf measurement-frequency { type uint16 { range "10..1000"; } units "Hz"; description "This parameter is the measurement frequency for a 3-element capacitance measurement, if performed with a sinewave signal, or a for 3-element complex admittance measurement. The range of valid values is from 10 to 1000 Hz with a granularity of 1 Hz."; reference "ITU-T G.996.2 clause E.2.2.1 (MELT-MFREQ)"; } leaf foreign-voltage-input-impedance { type uint32 { range "0..10000000"; } units "ohms"; description "This parameter reports the nominal input impedance of the measuring instrument during foreign voltage tests. The range of valid values is from 0 to 10 megaohms with a granularity of 1 ohm."; reference "ITU-T G.996.2 clause E.2.2.2 (MELT-IMP-V)"; } leaf loop-complex-admittance-measurement-voltage { type measurement-voltage; description "This parameter is the peak amplitude of the differential sinewave used by the measurement of the loop complex admittance with a high voltage metallic test. The range of valid values is from 0 to 150 volts and it shall be represented in linear format with a granularity of 0.1 volts."; reference "ITU-T G.996.2 clauses E.1.1.7 and E.2.2.3 (MELT-HCA-V)"; } leaf unreliability-indicator { if-feature bbf-melt:melt-pmd-reporting-parameter-reliability; type bits { bit measurement-frequency { position 0; description "This parameter is the measurement frequency for a 3-element capacitance measurement, if performed with a sinewave signal, or a for 3-element complex admittance measurement. The range of valid values is from 10 to 1000 Hz with a granularity of 1 Hz."; reference "ITU-T G.996.2 clause E.2.2.1 (MELT-MFREQ)"; } bit foreign-voltage-input-impedance { position 1; description "This parameter reports the nominal input impedance of the measuring instrument during foreign voltage tests. The range of valid values is from 0 to 10 megaohms with a granularity of 1 ohm."; reference "ITU-T G.996.2 clause E.2.2.2 (MELT-IMP-V)"; } bit loop-complex-admittance-measurement-voltage { position 2; description "This parameter is the peak amplitude of the differential sinewave used by the measurement of the loop complex admittance with a high voltage metallic test. The range of valid values is from 0 to 150 volts and it shall be represented in linear format with a granularity of 0.1 volts."; reference "ITU-T G.996.2 clauses E.1.1.7 and E.2.2.3 (MELT-HCA-V)"; } } description "The unreliability indicator provides the set of parameters whose data can be considered to be unreliable. Possible reasons that the data is unreliable: - The measurement may not have been able to run, possibly due to external conditions. - The result is not reliable as the accuracy may be degraded due to external conditions."; reference "ITU-T G.996.2 clause E.2.2.4 (Reliability indicator)"; } container melt-pmd-reporting-vendor-specific-status { if-feature bbf-melt:melt-pmd-reporting-parameter-reliability; description "Vendor specific status associated with each MELT reporting test."; list status { key "parameter"; description "A list of per parameter test status."; leaf parameter { type melt-pmd-reporting-parameter; description "The MELT PMD reporting parameter."; } leaf message { type string; description "Vendor specific status message for each of the MELT PMD reporting parameters."; } } // list status } // container melt-pmd-reporting-vendor-specific-status } // grouping pmd-reporting-parameters grouping processing-derived-parameters { description "Defines the Metallic Line Test Processing (MELT-P) derived parameters."; leaf open-wire-failure-type { type enumeration { enum "no-open" { value 0; description "No open wire failure detected."; } enum "tip-ring-open" { value 1; description "Tip and ring wires open in equal distance."; } enum "tip-open" { value 2; description "Tip wire open."; } enum "ring-open" { value 3; description "Ring wire open."; } enum "undefined" { value 4; description "Undefined."; } } description "This sub-parameter is a five state indication of the type of open wire failure defined as follows: 1) No open wire failure detected 2) Tip and ring wires open in equal distance 3) Tip wire open 4) Ring wire open 5) Undefined. NOTE - An error-free loop will be classified as failure state 2) in case that the remote end of the loop was left open during the measurement, or the connected Customer Premises Equipment (CPE) could not be detected (too low parallel CPE system capacitance)."; reference "ITU-T G.996.2 clause F.2.2.1.1 (MELT-O-WIRE-type)"; } leaf open-wire-failure-distance { type uint16 { range "0..10000"; } units "meters"; description "This parameter represents a best-effort estimate of the distance of the detected open wire failure from the measurement point, i.e., from the central office or of the total loop length if no failure is detected. A priori knowledge of the loop characteristics is required for reliable estimation of the distance. The range of valid values is from 0 to 10000 meters with a granularity of 1 meter."; reference "ITU-T G.996.2 clauses F.2.1.2 and F.2.2.1.2 (MELT-O-WIRE-DIST)"; } leaf short-circuit-failure-type { type enumeration { enum "no-short" { value 0; description "No short circuit detected."; } enum "tip-ring-short-to-ground" { value 1; description "Tip and ring wires shorted to ground (GND)."; } enum "tip-short-to-ground" { value 2; description "Tip wire shorted to ground (GND)."; } enum "ring-short-to-ground" { value 3; description "Ring wire shorted to ground (GND)."; } enum "tip-ring-short-to-each-other" { value 4; description "Tip and ring wires shorted to each other."; } enum "undefined" { value 5; description "Undefined."; } } description "This parameter is a six-state indication of the type of short circuit failure defined as follows: 1) No short circuit detected 2) Tip and ring wires shorted to GND 3) Tip wire shorted to GND 4) Ring wire shorted to GND 5) Tip and ring wires shorted to each other 6) Undefined."; reference "ITU-T G.996.2 clause F.2.2.2.1 (MELT-S-CCT-type)"; } leaf leakage-identification { type enumeration { enum "no-leakage" { value 0; description "No leakage detected."; } enum "tip-ring-leaking" { value 1; description "Tip and ring wire leaking to ground (GND)."; } enum "tip-leaking" { value 2; description "Tip wire leaking to ground (GND)."; } enum "ring-leaking" { value 3; description "Ring wire leaking to ground (GND)."; } } description "This parameter indicates a leakage to ground (GND) failure, classified into the following states: 1) No leakage detected 2) Tip and ring wire leaking to GND 3) Tip wire leaking to GND 4) Ring wire leaking to GND."; reference "ITU-T G.996.2 clause F.2.2.3 (MELT-LEAK-ID)"; } leaf resistive-fault-identification { type enumeration { enum "no-fault" { value 0; description "No resistive fault detected."; } enum "tip-ring-fault" { value 1; description "Resistive fault tip and ring to ground (GND)."; } enum "tip-fault" { value 2; description "Resistive fault tip to ground (GND)."; } enum "ring-fault" { value 3; description "Resistive fault ring to ground (GND)."; } } description "This parameter indicates a resistive fault to ground (GND) failure, classified into the following states: 1) No resistive fault detected 2) Resistive fault tip and ring to GND 3) Resistive fault tip to GND 4) Resistive fault ring to GND."; reference "ITU-T G.996.2 clause F.2.2.4 (MELT-RFAULT-ID)"; } leaf foreign-voltage-type-classification { type enumeration { enum "no-foreign-voltage-detected" { value 0; description "No foreign voltage detected."; } enum "16-hz-ac-voltage" { value 1; description "16 2/3 Hz AC voltage on both tip and ring wires."; } enum "25-hz-ac-voltage" { value 2; description "25 Hz AC voltage on both tip and ring wires."; } enum "50-hz-ac-voltage" { value 3; description "50 Hz AC voltage on both tip and ring wires."; } enum "60-hz-ac-voltage" { value 4; description "60 Hz AC voltage on both tip and ring wires."; } enum "pots-equipment" { value 5; description "POTS equipment (-48 volts DC) on both tip and ring wires."; } enum "isdn-equipment" { value 6; description "ISDN equipment (-96 volts DC) on both tip and ring wires."; } enum "undefined-foreign-voltage-detected" { value 7; description "Undefined foreign voltage detected on both tip and ring wires."; } enum "16-hz-ac-voltage-tip" { value 8; description "16 2/3 Hz AC voltage on the tip wire."; } enum "16-hz-ac-voltage-ring" { value 9; description "16 2/3 Hz AC voltage on the ring wire."; } enum "25-hz-ac-voltage-tip" { value 10; description "25 Hz AC voltage on the the tip wire."; } enum "25-hz-ac-voltage-ring" { value 11; description "25 Hz AC voltage on the the ring wire."; } enum "50-hz-ac-voltage-tip" { value 12; description "50 Hz AC voltage on the tip wire."; } enum "50-hz-ac-voltage-ring" { value 13; description "50 Hz AC voltage on the ring wire."; } enum "60-hz-ac-voltage-tip" { value 14; description "60 Hz AC voltage on the tip wire."; } enum "60-hz-ac-voltage-ring" { value 15; description "60 Hz AC voltage on the ring wire."; } enum "pots-equipment-tip" { value 16; description "POTS equipment (-48 volts DC) on the tip wire."; } enum "pots-equipment-ring" { value 17; description "POTS equipment (-48 volts DC) on the ring wire."; } enum "isdn-equipment-tip" { value 18; description "ISDN equipment (-96 volts DC) on the tip wire."; } enum "isdn-equipment-ring" { value 19; description "ISDN equipment (-96 volts DC) on the ring wire."; } enum "undefined-foreign-voltage-detected-tip" { value 20; description "Undefined foreign voltage detected on the tip wire."; } enum "undefined-foreign-voltage-detected-ring" { value 21; description "Undefined foreign voltage detected on the ring wire."; } } description "The foreign voltage impairment in the loop under test is classified into the following states: 1) No foreign voltage detected 2) 16 2/3 Hz AC voltage 3) 25 Hz AC voltage 4) 50 Hz AC voltage 5) 60 Hz AC voltage 6) POTS equipment (-48 volts DC) 7) ISDN equipment (-96 volts DC) 8) Undefined foreign voltage detected. This classification shall be done separately for both, the tip and the ring wire."; reference "ITU-T G.996.2 clause F.2.2.5.1 (MELT-FV-TYPE)"; } leaf foreign-voltage-level-classification { type enumeration { enum "hazardous-potential" { value 0; description "Hazardous potential (e.g., power contact)."; } enum "foreign-electromotive-force" { value 1; description "Foreign electromotive force."; } enum "other" { value 2; description "Other."; } } description "This parameter provides a general classification of the foreign voltage into the following classes: 1) hazardous potential (e.g., power contact) 2) foreign electromotive force 3) other."; reference "ITU-T G.996.2 clause F.2.2.5.2 (MELT-FV-LEVEL)"; } leaf far-end-signature-topology-type-identification { type enumeration { enum "no-signature-detected" { value 0; description "No signature detected."; } enum "unknown-signature" { value 1; description "Unknown signature."; } enum "signature-type-dr" { value 2; description "Signature type DR detected."; } enum "signature-type-zrc" { value 3; description "Signature type ZRC detected."; } enum "signature-type-dr-inverse" { value 4; description "Signature type DR inverse detected."; } enum "signature-type-dr-plus-zrc" { value 5; description "Signature types DR and XRC detected."; } enum "signature-type-dr-inverse-plus-zrc" { value 6; description "Signature types DR inverse and XRC detected."; } } description "This parameter specifies the topology types of the detected far-end signature. Valid response values are: - no signature detected - unknown signature - signature type DR detected - signature type ZRC detected."; reference "ITU-T G.996.2 clause F.2.2.6.1 (MELT-FES-ID)"; } leaf cpe-identification-capacitive { type enumeration { enum "no-cpe-detected" { value 0; description "No CPE has been detected."; } enum "cpe-detected" { value 1; description "A CPE has been detected."; } } description "Customer Premises Equipment (CPE) detected shall be reported if the measured capacitance value CTR-Term is >= MELT-SYSC-CPE. CTR-Term shall represent the termination capacitance only. Therefore, the line capacitance shall be subtracted from the measured CTR value. For this equation to hold, the MELT-SYSC-CPE value should be derived from the nominal CPE capacitance by accounting for all tolerances and be set to the minimum possible measurement result."; reference "ITU-T G.996.2 clause F.2.2.7 (MELT-CPE-ID)"; } leaf unreliability-indicator { if-feature bbf-melt:melt-processing-derived-parameter-reliability; type bits { bit open-wire-failure-type { position 0; description "This sub-parameter is a five state indication of the type of open wire failure defined as follows: 1) No open wire failure detected 2) Tip and ring wires open in equal distance 3) Tip wire open 4) Ring wire open 5) Undefined. NOTE - An error-free loop will be classified as failure state 2) in case that the remote end of the loop was left open during the measurement, or the connected CPE equipment could not be detected (too low parallel CPE system capacitance)."; reference "ITU-T G.996.2 clause F.2.2.1.1 (MELT-O-WIRE-type)"; } bit open-wire-failure-distance { position 1; description "This parameter represents a best-effort estimate of the distance of the detected open wire failure from the measurement point, i.e., from the central office or of the total loop length if no failure is detected. A priori knowledge of the loop characteristics is required for reliable estimation of the distance (see clause F.2.1.2). The range of valid values is from 0 to 10000 meters with a granularity of 1 meter."; reference "ITU-T G.996.2 clause F.2.2.1.2 (MELT-O-WIRE-DIST)"; } bit short-circuit-failure-type { position 2; description "This parameter is a six-state indication of the type of short circuit failure defined as follows: 1) No short circuit detected 2) Tip and ring wires shorted to GND 3) Tip wire shorted to GND 4) Ring wire shorted to GND 5) Tip and ring wires shorted to each other 6) Undefined."; reference "ITU-T G.996.2 clause F.2.2.2.1 (MELT-S-CCT-type)"; } bit leakage-identification { position 3; description "This parameter indicates a leakage to GND failure, classified into the following states: 1) No leakage detected 2) Tip and ring wire leaking to GND 3) Tip wire leaking to GND 4) Ring wire leaking to GND."; reference "ITU-T G.996.2 clause F.2.2.3 (MELT-LEAK-ID)"; } bit resistive-fault-identification { position 4; description "This parameter indicates a resistive fault to GND failure, classified into the following states: 1) No resistive fault detected 2) Resistive fault tip and ring to GND 3) Resistive fault tip to GND 4) Resistive fault ring to GND."; reference "ITU-T G.996.2 clause F.2.2.4 (MELT-RFAULT-ID)"; } bit foreign-voltage-type-classification { position 5; description "The foreign voltage impairment in the loop under test is classified into the following states: 1) No foreign voltage detected 2) 16 2/3 Hz AC voltage 3) 25 Hz AC voltage 4) 50 Hz AC voltage 5) 60 Hz AC voltage 6) POTS equipment (-48 volts DC) 7) ISDN equipment (-96 volts DC) 8) Undefined foreign voltage detected. This classification shall be done separately for both, the tip and the ring wire."; reference "ITU-T G.996.2 clause F.2.2.5.1 (MELT-FV-TYPE)"; } bit foreign-voltage-level-classification { position 6; description "This parameter provides a general classification of the foreign voltage into the following classes: 1) hazardous potential (e.g., power contact) 2) foreign electromotive force 3) other."; reference "ITU-T G.996.2 clause F.2.2.5.2 (MELT-FV-LEVEL)"; } bit far-end-signature-topology-type-identification { position 7; description "This parameter specifies the topology types of the detected far-end signature. Valid response values are: - no signature detected - unknown signature - signature type DR detected - signature type ZRC detected."; reference "ITU-T G.996.2 clause F.2.2.6.1 (MELT-FES-ID)"; } bit cpe-identification-capacitive { position 8; description "CPE detected shall be reported if the measured capacitance value CTR-Term is >= MELT-SYSC-CPE. CTR-Term shall represent the termination capacitance only. Therefore, the line capacitance shall be subtracted from the measured CTR value. For this equation to hold, the MELT-SYSC-CPE value should be derived from the nominal CPE capacitance by accounting for all tolerances and be set to the minimum possible measurement result."; reference "ITU-T G.996.2 clause F.2.2.7 (MELT-CPE-ID)"; } } description "The unreliability indicator provides the set of parameters whose data can be considered to be unreliable. Possible reasons that the data is unreliable: - The measurement may not have been able to run, possibly due to external conditions. - The result is not reliable as the accuracy may be degraded due to external conditions."; reference "ITU-T G.996.2 clause F.2.2.8 (Reliability indicator)"; } container melt-processing-derived-vendor-specific-status { if-feature bbf-melt:melt-processing-derived-parameter-reliability; description "Vendor specific status associated with each MELT processing derived test."; list status { key "parameter"; description "A list of per parameter test status."; leaf parameter { type melt-processing-derived-parameter; description "The MELT processing derived parameter."; } leaf message { type string; description "Vendor specific status message for each of the MELT processing derived parameters."; } } // list status } // container melt-processing-derived-vendor-specific-status } // grouping processing-derived-parameters // objects container melt { description "Metallic Line Test (MELT) configuration."; container profiles { description "Configuration profiles."; } // container profiles } // container melt augment /if:interfaces/if:interface { when "if:type = 'ianaift:fastdsl'" { description "Only applicable when the interface type is 'fastdsl'."; } description "Data nodes for the configuration of Metallic Line Test (MELT)."; container melt { presence "If present, indicates that the interface is capable of performing MELT functionality as defined in ITU-T G.996.2."; description "Configuration data for MELT."; } // container melt } augment /if:interfaces-state/if:interface { when "if:type = 'ianaift:fastdsl'" { description "Only applicable when the interface type is 'fastdsl'."; } description "Data nodes for the operational state data of Metallic Line Test (MELT)."; container melt { presence "If present, indicates that the interface is capable of performing Metallic Line Test (MELT) functionality as defined in ITU-T G.996.2."; description "Operational state data for Metallic Line Test (MELT)."; } // container melt } augment /bbf-melt:melt/bbf-melt:profiles { description "Data nodes for Physical Medium Dependent (PMD) configuration profiles."; list pmd-profile { key "name"; description "A list of Physical Medium Dependent (PMD) profiles."; leaf name { type bbf-yang:string-ascii64; description "A name that uniquely identifies the profile."; } uses pmd-profile; } // list pmd-profile } augment /bbf-melt:melt/bbf-melt:profiles { description "Data nodes for processing profiles."; list processing-profile { key "name"; description "A list of processing profiles."; leaf name { type bbf-yang:string-ascii64; description "A name that uniquely identifies the profile. Note that entries in this list are referenced by the leaf 'processing-profile', defined in bbf-melt-pointers, which is dependent on the feature 'melt-p'."; } uses processing-profile; } // list processing-profile } augment /if:interfaces/if:interface/bbf-melt:melt { description "Data nodes to support the assignment of Metallic Line Test (MELT) configuration."; leaf pmd-profile { type pmd-profile-ref; status deprecated; description "References a Metallic Line Test Physical Medium Dependent (MELT-PMD) profile. This method of configuration has been deprecated. The 'profile-config' method should instead be used."; } leaf processing-profile { if-feature melt-p; type leafref { path "/bbf-melt:melt/bbf-melt:profiles/bbf-melt:processing-profile/bbf-melt:name"; } status deprecated; description "References a Metallic Test Processing (MELT-P) profile. This method of configuration has been deprecated. The 'profile-config' method should instead be used."; } container melt-pmd-control { status deprecated; description "Data nodes to support the Metallic Line Test Physical Medium Dependent (MELT-PMD) control object."; uses melt-pmd-control { status deprecated; } } // container melt-pmd-control choice profile-config { description "The method for configuring profiles used for a Metallic Line Test (MELT) on this interface. If no method is configured, the default behavior is equivalent to the presence of 'no-profiles-attached'."; leaf no-profiles-attached { type empty; description "If present, indicates that no profiles are attached to this line."; } container direct-attachment-mode { description "Configuration associated with assigning Metallic Line Test (MELT) profiles."; leaf pmd-profile { type pmd-profile-ref; mandatory true; description "References a Metallic Line Test Physical Medium Dependent (MELT-PMD) profile."; } leaf processing-profile { if-feature melt-p; type leafref { path "/bbf-melt:melt/bbf-melt:profiles/bbf-melt:processing-profile/bbf-melt:name"; } mandatory true; description "References a Metallic Test Processing (MELT-P) profile."; } } // container direct-attachment-mode } // choice profile-config } augment /if:interfaces/if:interface/bbf-melt:melt/bbf-melt:profile-config/bbf-melt:direct-attachment-mode/bbf-melt:direct-attachment-mode { description "Data nodes for the configuration of Metallic Line Test Physical Medium Dependent (MELT-PMD) control."; container pmd-control { description "Data nodes to support the Metallic Line Test Physical Medium Dependent (MELT-PMD) control object."; uses pmd-control; } // container pmd-control } augment /if:interfaces-state/if:interface/bbf-melt:melt { description "Data nodes for the configuration of Metallic Line Test Physical Medium Dependent (MELT-PMD) status."; container pmd-status { description "Status associated with the Metallic Line Test Physical Medium Dependent (MELT-PMD) control object."; uses pmd-status; } // container pmd-status notification melt-pmd-completed { description "Indicates that a Metallic Line Test Physical Medium Dependent (MELT-PMD) function has failed, succeeded or has been aborted."; leaf function { type pmd-function; mandatory true; description "The function that was performed or attempted to perform."; } leaf result { type pmd-result; mandatory true; description "The result of the attempted execution of the Metallic Line Test Physical Medium Dependent (MELT-PMD) function."; } } // notification melt-pmd-completed } augment /if:interfaces-state/if:interface/bbf-melt:melt { description "Data nodes to support the reporting of Metallic Line Test (MELT) result parameters."; container pmd-reporting-parameters { description "Metallic Line Test Physical Medium Dependent (MELT-PMD) reporting parameters."; uses pmd-reporting-parameters; } // container pmd-reporting-parameters container pmd-measurement-parameters { description "Metallic Line Test Physical Medium Dependent (MELT-PMD) measurement parameters."; uses pmd-measurement-parameters; } // container pmd-measurement-parameters container processing-derived-parameters { if-feature melt-p; description "Metallic Line Test Processing (MELT-P) derived parameters."; uses processing-derived-parameters; } // container processing-derived-parameters } } // module bbf-melt
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