module bbf-melt {

    yang-version 1.1;

    namespace "urn:bbf:yang:bbf-melt";

    prefix bbf-melt;

    include bbf-melt-base;
    include bbf-melt-pointers;
    include bbf-melt-pmd;
    include bbf-melt-pmd-control-body;
    include bbf-melt-pmd-status-body;
    include bbf-melt-pmd-profiles;
    include bbf-melt-pmd-profile-body;
    include bbf-melt-processing-profiles;
    include bbf-melt-processing-profile-body;
    include bbf-melt-result-parameters;
    include bbf-melt-pmd-measurement-parameter-body;
    include bbf-melt-pmd-reporting-parameter-body;
    include bbf-melt-processing-derived-parameter-body;

    organization
      "Broadband Forum <https://www.broadband-forum.org>
Common YANG Work Area";

    contact
      "Comments or questions about this Broadband Forum YANG module
should be directed to <mailto:help@broadband-forum.org>.

Editor:      Ken Kerpez, ASSIA, Inc.

Editor:      Joey Boyd, Adtran

PS Leader:   Joey Boyd, Adtran

WA Director: Sven Ooghe, Nokia

WA Director: Joey Boyd, Adtran";

    description
      "This module contains a collection of YANG definitions for
supporting the Broadband Forum requirements on management of
Metallic Line Test (MELT) as defined in ITU-T G.996.2 and BBF
TR-298. As such, this module is specific to access network
equipment (e.g., BBF-specified Access Nodes and FTTdp DPUs).

Copyright (c) 2016-2022 Broadband Forum

Redistribution and use in source and binary forms, with or
without modification, are permitted provided that the following
conditions are met:

1. Redistributions of source code must retain the above copyright
   notice, this list of conditions and the following disclaimer.

2. Redistributions in binary form must reproduce the above
   copyright notice, this list of conditions and the following
   disclaimer in the documentation and/or other materials
   provided with the distribution.

3. Neither the name of the copyright holder nor the names of its
   contributors may be used to endorse or promote products
   derived from this software without specific prior written
   permission.

THIS SOFTWARE IS PROVIDED BY THE COPYRIGHT HOLDERS AND
CONTRIBUTORS "AS IS" AND ANY EXPRESS OR IMPLIED WARRANTIES,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF
MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE ARE
DISCLAIMED. IN NO EVENT SHALL THE COPYRIGHT HOLDER OR
CONTRIBUTORS BE LIABLE FOR ANY DIRECT, INDIRECT, INCIDENTAL,
SPECIAL, EXEMPLARY, OR CONSEQUENTIAL DAMAGES (INCLUDING, BUT
NOT LIMITED TO, PROCUREMENT OF SUBSTITUTE GOODS OR SERVICES;
LOSS OF USE, DATA, OR PROFITS; OR BUSINESS INTERRUPTION) HOWEVER
CAUSED AND ON ANY THEORY OF LIABILITY, WHETHER IN CONTRACT,
STRICT LIABILITY, OR TORT (INCLUDING NEGLIGENCE OR OTHERWISE)
ARISING IN ANY WAY OUT OF THE USE OF THIS SOFTWARE, EVEN IF
ADVISED OF THE POSSIBILITY OF SUCH DAMAGE.

The above license is used as a license under copyright only.
Please reference the Forum IPR Policy for patent licensing terms
<https://www.broadband-forum.org/ipr-policy>.

Any moral rights which are necessary to exercise under the above
license grant are also deemed granted under this license.

This version of this YANG module is part of TR-355a4; see
the TR itself for full legal notices.";

    revision "2022-05-23" {
      description
        "Amendment 4.
* Approval Date:    2022-05-23
* Publication Date: 2022-05-23.";
      reference
        "TR-355a4: YANG Modules for FTTdp Management
        	    <https://www.broadband-forum.org/download/
        		   TR-355_Amendment-4.pdf>";

    }

    revision "2020-10-13" {
      description
        "Amendment 3.
* Approval Date:    2020-10-13
* Publication Date: 2020-10-13.";
      reference
        "TR-355a3: YANG Modules for FTTdp Management
        	    <https://www.broadband-forum.org/download/
        		   TR-355_Amendment-3.pdf>";

    }

    revision "2019-06-11" {
      description
        "Amendment 2.
* Approval Date:    2019-06-11
* Publication Date: 2019-06-11.";
      reference
        "TR-355a2: YANG Modules for FTTdp Management
        	  <https://www.broadband-forum.org/technical/download/
        		 TR-355_Amendment-2.pdf>";

    }

    revision "2018-10-01" {
      description
        "Amendment 1.
* Approval Date:    2018-10-01
* Publication Date: 2018-10-01.";
      reference
        "TR-355a1: YANG Modules for FTTdp Management
        	  <https://www.broadband-forum.org/technical/download/
        		 TR-355_Amendment-1.pdf>";

    }

    revision "2017-11-27" {
      description
        "Corrigendum 2 (fixes to the previous revision).
* Approval Date:    see revision date above.
* Publication Date: 2018-01-19.";
      reference
        "TR-355c2: YANG Modules for FTTdp Management
        	  <https://www.broadband-forum.org/technical/download/
        		 TR-355_Corrigendum-2.pdf>";

    }

    revision "2016-07-18" {
      description
        "Initial revision.
* Approval Date:    see revision date above.
* Publication Date: 2016-08-05.";
      reference
        "TR-355: YANG Modules for FTTdp Management
        	<https://www.broadband-forum.org/technical/download/
        		 TR-355.pdf>";

    }


    // features

    feature melt-p {
      description
        "Indicates support for Metallic Line Test (MELT) processing
profiles (MELT-P).";
      reference
        "ITU-T G.996.2 Annex F";

    }

    feature melt-pmd-reporting-parameter-reliability {
      description
        "Indicates support for reporting the reliability of the
Physical Medium Dependent (PMD) reporting parameters.";
    }

    feature melt-pmd-measurement-parameter-reliability {
      description
        "Indicates support for reporting the reliability of the
Physical Medium Dependent (PMD) measurement parameters.";
    }

    feature melt-processing-derived-parameter-reliability {
      description
        "Indicates support for reporting the reliability of the
processing derived parameters.";
    }

    // identities

    identity measurement-class {
      description
        "Base identity for defining the various measurements.";
    }

    identity melt-cdcr {
      base measurement-class;
      description
        "The 4-element DC resistance with controlled metallic
voltage.";
      reference
        "ITU-T G.996.2 clause E.2.3.1 (MELT-CDCR-xx)";

    }

    identity melt-cc {
      base measurement-class;
      description
        "The 3-element capacitance with controlled metallic voltage.";
      reference
        "ITU-T G.996.2 clause E.2.3.4 (MELT-CC-xx)";

    }

    identity melt-fvdc {
      base measurement-class;
      description "The foreign DC voltage.";
      reference
        "ITU-T G.996.2 clause E.2.3.5 (MELT-FVDC-xx)";

    }

    identity melt-fvac {
      base measurement-class;
      description "The foreign AC voltage.";
      reference
        "ITU-T G.996.2 clause E.2.3.5 (MELT-FVAC-xx)";

    }

    identity melt-hc {
      base measurement-class;
      description "The loop capacitance.";
      reference
        "ITU-T G.996.2 clause E.2.3.6 (MELT-HC-xx)";

    }

    identity melt-hdcr {
      base measurement-class;
      description
        "The loop resistance with high metallic voltage.";
      reference
        "ITU-T G.996.2 clause E.2.3.7 (MELT-HDCR-xx)";

    }

    identity melt-ca {
      base measurement-class;
      description
        "The 3-element complex admittance with controlled metallic
voltage.";
      reference
        "ITU-T G.996.2 clause E.2.3.9 (MELT-CAx-xx)";

    }

    identity melt-ha {
      base measurement-class;
      description
        "The loop complex admittance with high metallic voltage.";
      reference
        "ITU-T G.996.2 clause E.2.3.10 (MELT-HAx-xx)";

    }

    // typedefs
    typedef pmd-function {
      type enumeration {
        enum "measurement" {
          value 1;
          description
            "Triggers the Metallic Line Test Physical Medium Dependent
(MELT-PMD) to start the test or tests specified by the
measurement class (MELT-MCLASS).";
        }
        enum
          "pair-identification-tone-generation" {
          value 2;
          description
            "Triggers the Metallic Line Test Physical Medium Dependent
(MELT-PMD) to start a Pair Identification Tone (PIT)
generation.";
        }
      }
      description "The MELT PMD function.";
    }

    typedef pmd-profile-ref {
      type leafref {
        path "/bbf-melt:melt/bbf-melt:profiles/bbf-melt:pmd-profile/bbf-melt:name";
      }
      description
        "Used to reference a Physical Medium Dependent (PMD) profile.";
    }

    typedef pmd-result {
      type enumeration {
        enum
          "no-measurement-results-available" {
          value 0;
          description
            "No measurement results are available when no mesurement
has been performed yet or after measurement results have
been deleted.";
        }
        enum
          "measurement-failed-results-invalid" {
          value 1;
          description
            "The measurement results are invalid after the most recent
measurement failed.";
        }
        enum
          "measurement-succeeded-results-valid" {
          value 2;
          description
            "The measurement results are valid after the most recent
measurement succeeded.";
        }
      }
      description
        "The overall results of the Physical Medium Dependent (PMD)
measurement.";
      reference
        "ITU-T G.996.2 clause E.3.4";

    }

    typedef four-element-dc-resistance {
      type uint32 {
        range "0..10000000";
      }
      units "ohms";
      description
        "The 4-element DC resistances, RTR (Tip-to-Ring), RRT
(Ring-to-Tip), RTG (Tip-to-Ground), and RRG (Ring-to-Ground),
shall be represented in linear format. The range of valid
values is from 0 to 10 megaohms with a granularity of 1 ohm.";
      reference
        "ITU-T G.996.2 clause E.2.3.1 (MELT-CDCR-TR, MELT-CDCR-RT,
        MELT-CDCR-TG, MELT-CDCR-RG)";

    }

    typedef three-element-capacitance {
      type int32 {
        range "-20000..50000";
      }
      units "0.1 nanofarads";
      description
        "The 3-element capacitances, CTR (Tip-to-Ring), CTG
(Tip-to-Ground), and CRG (Ring-to-Ground), shall be represented
in linear format. The range of valid values is from -2 to 5
microfarads with a granularity of 0.1 nanofarads.";
      reference
        "ITU-T G.996.2 clause E.2.3.4 (MELT-CC-TR, MELT-CC-TG,
        MELT-CC-RG)";

    }

    typedef foreign-dc-voltage {
      type int16 {
        range "-3500..3500";
      }
      units "0.1 volts";
      description
        "The range of valid values for the foreign DC voltages,
VTR-DC (Tip-to-Ring), VTG-DC (Tip-to-Ground), and VRG-DC
(Ring-to-Ground) is from -350 to 350 volts. The foreign DC
voltage shall be represented in linear format with a
granularity of 100 millivolts.

The reported DC voltage polarity is defined with respect to
ground for the VTG-DC and VRG-DC measurements and returns a
positive result for the VTR-DC measurement if the tip wire
is more positive than the ring wire.";
      reference
        "ITU-T G.996.2 clause E.2.3.5 (MELT-FVDC-TR, MELT-FVDC-TG,
        MELT-FVDC-RG)";

    }

    typedef foreign-ac-voltage {
      type uint16 {
        range "0..2500";
      }
      units "0.1 volts RMS";
      description
        "The range of valid values for the foreign AC voltages
VTR-AC (Tip-to-Ring), VTG-AC (Tip-to-Ground), and VRG-AC
(Ring-To-Ground) is from 0 to 250 volts RMS. The foreign AC
voltage shall be represented in linear format with a
granularity of 100 millivolts.";
      reference
        "ITU-T G.996.2 clause E.2.3.5 (MELT-FVAC-TR, MELT-FVAC-TG,
        MELT-FVAC-RG)";

    }

    typedef foreign-ac-voltage-frequency {
      type uint16 {
        range "100..900";
      }
      units "0.1 Hz";
      description
        "The range of valid values for the foreign AC voltage FTR-AC
(Tip-to-Ring), FTG-AC (Tip-to-Ground), and FRG-AC
(Ring-To-Ground) is from 10 to 90 Hz with a granularity
of 0.1 Hz.";
      reference
        "ITU-T G.996.2 clause E.2.3.5 (MELT-FVACF-TR, MELT-FVACF-TG,
        MELT-FVACF-RG)";

    }

    typedef loop-resistance {
      type uint32 {
        range "0..10000000";
      }
      units "ohms";
      description
        "The loop resistances RTF-HV (Tip-to-Ring) and RRT-HV
(Ring-to-Tip) shall be represented in linear format. The range
of valid values is from 0 to 10 megaohms with a granularity of
1 ohm. The RTR-HV and RRT-HV values of the loop resistance with
high metallic voltage test are the total resistances measured.
The RTR and RRT values obtained from the 3-element resistance
with controlled metallic voltage test are not subtracted from
the results.";
      reference
        "ITU-T G.996.2 clause E.2.3.7 (MELT-HDCR-TR, MELT-HDCR-RT)";

    }

    typedef dc-test-voltage {
      type int16 {
        range "-1500..1500";
      }
      units "0.1 volts";
      description
        "The test voltages for the measurement of the 4-element DC
resistance, VDCTR (Tip-to-Ring), VDCRT (Ring-to-Tip), VDCTG
(Tip-to-Ground), and VDCRG (Ring-to-Ground), shall be
represented in linear format. The range of valid values is from
-150 V to +150 volts with a granularity of 0.1 volts.";
      reference
        "ITU-T G.996.2 clause E.2.3.2 (MELT-CDCV-TR, MELT-CDCV-RT,
        MELT-CDCV-TG, MELT-CDCV-RG)";

    }

    typedef test-current {
      type int32 {
        range "-1000000..1000000";
      }
      units "microamperes";
      description
        "The test currents for the measurement of the 4-element DC
resistance, IDCTR (Tip-to-Ring), IDCRT (Ring-to-Tip),
IDCTG (Tip-to-Ground), and IDCRG (Ring-to-Ground), shall be
represented in linear format. The range of valid values is from
-1 A to +1 ampere with a granularity of 1 microampere.";
      reference
        "ITU-T G.996.2 clause E.2.3.3 (MELT-CDCI-TR, MELT-CDCI-RT,
        MELT-CDCI-TG, MELT-CDCI-RG)";

    }

    typedef loop-resistance-test-voltage {
      type int16 {
        range "-1500..1500";
      }
      units "0.1 volts";
      description
        "The test voltages for the measurement of the loop resistance
with a high metallic voltage, VDCHTR (Tip-to-Ring) and
VDCHRT (Ring-to-Tip) shall be represented in linear format.
The range of valid values is from -150 volts to +150 volts with
a granularity of 0.1 volts.";
      reference
        "ITU-T G.996.2 clause E.2.3.8 (MELT-HDCV-TR, MELT-HDCV-RT)";

    }

    typedef measurement-voltage {
      type uint16 {
        range "0..1500";
      }
      units "0.1 volts";
      description
        "The range of valid values for the AC voltages VACTR-CC
(Tip-to-Ring), VACTG-CC (Tip-to-Ground), and VACRG-CC
(Ring-to-Ground) for the 3-element capacitance test with
a controlled metallic voltage is from 0 volts RMS to 150 volts
RMS. The values shall be represented in linear format with a
granularity of 0.1 volts.

The range of valid values for the AC voltage VACTR-HC for the
loop capacitance test with a high metallic voltage is from 0
volts RMS to 150 volts RMS. The values shall be represented in
linear format with a granularity of 0.1 volts.

The range of valid values for the AC voltages VACTR-CA,
VACTG-CA, and VACRG-CA for the 3-element complex admittance
test with a controlled metallic voltage is from 0 volts RMS to
150 volts RMS. The values shall be represented in linear format
with a granularity of 0.1 volts.

The range of valid values for the AC voltage VACTR-HA for the
loop complex admittance test with a high metallic voltage is
from 0 volts RMS to 150 volts RMS. The values shall be
represented in linear format with a granularity of 0.1 volts.";
      reference
        "ITU-T G.996.2 clauses E.2.3.11 (MELT-ACV-CC-TR,
        MELT-ACV-CC-TG, MELT-ACV-CC-RG); E.2.3.12 (MELT-ACV-HC-TR);
        E.2.3.13 (MELT-ACV-CA-TR, MELT-ACV-CA-TG, MELT-ACV-CA-RG);
        E.2.3.14 (MELT-ACV-HA-TR); and E.2.2.3 (MELT-HCA-V)";

    }

    typedef complex-admittance {
      type uint32 {
        range "1..1000000";
      }
      units "0.1 microsiemens";
      description
        "The range of valid values for the 3-element complex
conductances and susceptances, GTR and BTR (Tip-to-Ring);
GTG and BTG (Tip-to-Ground); and GRG and BRG (Ring-to-Ground)
is from 0.1 microsiemens to 0.1 siemens. The values shall be
represented in linear format with a granularity of 0.1
microsiemens.

NOTE - The linear format is chosen for simplicity reason and
does not imply any future accuracy requirements.";
      reference
        "ITU-T G.996.2 clause E.2.3.9 (MELT-CAG-TR, MELT-CAB-TR,
        MELT-CAG-TG, MELT-CAB-TG, MELT-CAG-RG, MELT-CAB-RG)";

    }

    typedef loop-complex-admittance {
      type uint32 {
        range "1..1000000";
      }
      units "0.1 microsiemens";
      description
        "The range of valid values for the 3-element complex
conductance and susceptance GTR,HV and BTR,HV (Tip-to-Ring) is
from 0.1 microsiemens to 0.1 siemens. The values shall be
represented in linear format with a granularity of 0.1
microsiemens. The GTR,HV and BTR,HV values of the loop complex
admittance with high metallic voltage test are the total
conductance and susceptance measured. The GTR and BTR values
obtained from the 3-element complex admittance with controlled
metallic voltage test are not subtracted from the results.

NOTE - The linear format is chosen for simplicity reason and
does not imply any future accuracy requirements.";
      reference
        "ITU-T G.996.2 clause E.2.3.10 (MELT-HAG-TR, MELT-HAB-TR)";

    }

    typedef melt-pmd-measurement-parameter {
      type enumeration {
        enum "four-element-dc-resistance-tr" {
          value 0;
          description
            "The 4-element DC resistance with controlled metallic
voltage, RTR (Tip-to-Ring).";
          reference
            "ITU-T G.996.2 clause E.2.3.1 (MELT-CDCR-TR)";

        }
        enum "four-element-dc-resistance-rt" {
          value 1;
          description
            "The 4-element DC resistance with controlled metallic
voltage, RRT (Ring-to-Tip).";
          reference
            "ITU-T G.996.2 clause E.2.3.1 (MELT-CDCR-RT)";

        }
        enum "four-element-dc-resistance-tg" {
          value 2;
          description
            "The 4-element DC resistance with controlled metallic
voltage, RTG (Tip-to-Ground).";
          reference
            "ITU-T G.996.2 clause E.2.3.1 (MELT-CDCR-TG)";

        }
        enum "four-element-dc-resistance-rg" {
          value 3;
          description
            "The 4-element DC resistance with controlled metallic
voltage, RRG (Ring-to-Ground).";
          reference
            "ITU-T G.996.2 clause E.2.3.1 (MELT-CDCR-RG)";

        }
        enum "three-element-capacitance-tr" {
          value 4;
          description
            "The 3-element capacitance with controlled metallic
voltage, CTR (Tip-to-Ring).";
          reference
            "ITU-T G.996.2 clause E.2.3.4 (MELT-CC-TR)";

        }
        enum "three-element-capacitance-tg" {
          value 5;
          description
            "The 3-element capacitance with controlled metallic
voltage, CTG (Tip-to-Ground).";
          reference
            "ITU-T G.996.2 clause E.2.3.4 (MELT-CC-TG)";

        }
        enum "three-element-capacitance-rg" {
          value 6;
          description
            "The 3-element capacitance with controlled metallic
voltage, CRG (Ring-to-Ground).";
          reference
            "ITU-T G.996.2 clause E.2.3.4 (MELT-CC-RG)";

        }
        enum "foreign-dc-voltage-tr" {
          value 7;
          description
            "The foreign DC voltage, VTR-DC (Tip-to-Ring).";
          reference
            "ITU-T G.996.2 clause E.2.3.5 (MELT-FVDC-TR)";

        }
        enum "foreign-dc-voltage-tg" {
          value 8;
          description
            "The foreign DC voltage, VTG-DC (Tip-to-Ground).";
          reference
            "ITU-T G.996.2 clause E.2.3.5 (MELT-FVDC-TG)";

        }
        enum "foreign-dc-voltage-rg" {
          value 9;
          description
            "The foreign DC voltage, VRG-DC (Ring-to-Ground).";
          reference
            "ITU-T G.996.2 clause E.2.3.5 (MELT-FVDC-RG)";

        }
        enum "foreign-ac-voltage-tr" {
          value 10;
          description
            "The foreign AC voltage, VTR-AC (Tip-to-Ring).";
          reference
            "ITU-T G.996.2 clause E.2.3.5 (MELT-FVAC-TR)";

        }
        enum "foreign-ac-voltage-tg" {
          value 11;
          description
            "The foreign AC voltage, VTG-AC (Tip-to-Ground).";
          reference
            "ITU-T G.996.2 clause E.2.3.5 (MELT-FVAC-TG)";

        }
        enum "foreign-ac-voltage-rg" {
          value 12;
          description
            "The foreign AC voltage, VRG-AC (Ring-to-Ground).";
          reference
            "ITU-T G.996.2 clause E.2.3.5 (MELT-FVAC-RG)";

        }
        enum
          "foreign-ac-voltage-frequency-tr" {
          value 13;
          description
            "The foreign AC voltage frequency for VTR-AC
(Tip-to-Ring).";
          reference
            "ITU-T G.996.2 clause E.2.3.5 (MELT-FVACF-TR)";

        }
        enum
          "foreign-ac-voltage-frequency-tg" {
          value 14;
          description
            "The foreign AC voltage frequency for VTG-AC
(Tip-to-Ground).";
          reference
            "ITU-T G.996.2 clause E.2.3.5 (MELT-FVACF-TG)";

        }
        enum
          "foreign-ac-voltage-frequency-rg" {
          value 15;
          description
            "The foreign AC voltage frequency for VRG-AC
(Ring-to-Ground).";
          reference
            "ITU-T G.996.2 clause E.2.3.5 (MELT-FVACF-RG)";

        }
        enum "loop-capacitance-hv-tr" {
          value 16;
          description
            "The loop capacitance CTR-HV (Tip-to-Ring) shall be
represented in linear format. The range of valid values
is from 0 to 5 microfarads with a granularity of 0.1
nanofarads. The CTR-HV value of the loop capacitance with
high metallic voltage test is the total capacitance
measured. The CTR value obtained from the 3-element
capacitance with controlled metallic voltage test is not
subtracted from the results.";
          reference
            "ITU-T G.996.2 clause E.2.3.6 (MELT-HV-TR)";

        }
        enum "loop-resistance-hv-tr" {
          value 17;
          description
            "The loop resistance with high metallic voltage, RTR-HV
(Tip-to-Ring).";
          reference
            "ITU-T G.996.2 clause E.2.3.7 (MELT-HDCR-TR)";

        }
        enum "loop-resistance-hv-rt" {
          value 18;
          description
            "The loop resistance with high metallic voltage, RRT-HV
(Ring-to-Tip).";
          reference
            "ITU-T G.996.2 clause E.2.3.7 (MELT-HDCR-RT)";

        }
        enum
          "four-element-dc-resistance-test-voltage-tr" {
          value 19;
          description
            "The DC test voltage for the measuremnt of 4-element DC
resistance with a controlled metallic voltage VDC-TR
(Tip-to-Ring).";
          reference
            "ITU-T G.996.2 clause E.2.3.2 (MELT-CDCV-TR)";

        }
        enum
          "four-element-dc-resistance-test-voltage-rt" {
          value 20;
          description
            "The DC test voltage for the measuremnt of 4-element DC
resistance with a controlled metallic voltage VDC-RT
(Ring-to-Tip).";
          reference
            "ITU-T G.996.2 clause E.2.3.2 (MELT-CDCV-RT)";

        }
        enum
          "four-element-dc-resistance-test-voltage-tg" {
          value 21;
          description
            "The DC test voltage for the measuremnt of 4-element DC
resistance with a controlled metallic voltage VDC-TG
(Tip-to-Ground).";
          reference
            "ITU-T G.996.2 clause E.2.3.2 (MELT-CDCV-TG)";

        }
        enum
          "four-element-dc-resistance-test-voltage-rg" {
          value 22;
          description
            "The DC test voltage for the measuremnt of 4-element DC
resistance with a controlled metallic voltage VDC-RG
(Ring-to-Ground).";
          reference
            "ITU-T G.996.2 clause E.2.3.2 (MELT-CDCV-RG)";

        }
        enum
          "four-element-dc-resistance-test-current-tr" {
          value 23;
          description
            "The test current for the measuremnt of 4-element DC
resistance with a controlled metallic voltage IDC-TR
(Tip-to-Ring).";
          reference
            "ITU-T G.996.2 clause E.2.3.3 (MELT-CDCI-TR)";

        }
        enum
          "four-element-dc-resistance-test-current-rt" {
          value 24;
          description
            "The test current for the measuremnt of 4-element DC
resistance with a controlled metallic voltage IDC-RT
(Ring-to-Tip).";
          reference
            "ITU-T G.996.2 clause E.2.3.3 (MELT-CDCI-RT)";

        }
        enum
          "four-element-dc-resistance-test-current-tg" {
          value 25;
          description
            "The test current for the measuremnt of 4-element DC
resistance with a controlled metallic voltage IDC-TG
(Tip-to-Ground).";
          reference
            "ITU-T G.996.2 clause E.2.3.3 (MELT-CDCI-TG)";

        }
        enum
          "four-element-dc-resistance-test-current-rg" {
          value 26;
          description
            "The test current for the measuremnt of 4-element DC
resistance with a controlled metallic voltage IDC-RG
(Ring-to-Ground).";
          reference
            "ITU-T G.996.2 clause E.2.3.3 (MELT-CDCI-RG)";

        }
        enum
          "loop-resistance-test-voltage-tr" {
          value 27;
          description
            "The test voltage for the measurement of the loop
resistance with a high metallic voltage VDCH-TR
(Tip-to-Ring).";
          reference
            "ITU-T G.996.2 clause E.2.3.8 (MELT-HDCV-TR)";

        }
        enum
          "loop-resistance-test-voltage-rt" {
          value 28;
          description
            "The test voltage for the measurement of the loop
resistance with a high metallic voltage VDCH-RT
(Ring-to-Tip).";
          reference
            "ITU-T G.996.2 clause E.2.3.8 (MELT-HDCV-RT)";

        }
        enum
          "three-element-complex-admittance-real-tr" {
          value 29;
          description
            "The real part of the 3-element complex admittance
with controlled metallic voltage (Tip-to-Ring).";
          reference
            "ITU-T G.996.2 clause E.2.3.9 (MELT-CAG-TR)";

        }
        enum
          "three-element-complex-admittance-imaginary-tr" {
          value 30;
          description
            "The imaginary part of the 3-element complex admittance
with controlled metallic voltage (Tip-to-Ring).";
          reference
            "ITU-T G.996.2 clause E.2.3.9 (MELT-CAB-TR)";

        }
        enum
          "three-element-complex-admittance-real-tg" {
          value 31;
          description
            "The real part of the 3-element complex admittance
with controlled metallic voltage (Tip-to-Ground).";
          reference
            "ITU-T G.996.2 clause E.2.3.9 (MELT-CAG-TG)";

        }
        enum
          "three-element-complex-admittance-imaginary-tg" {
          value 32;
          description
            "The imaginary part of the 3-element complex admittance
with controlled metallic voltage (Tip-to-Ground).";
          reference
            "ITU-T G.996.2 clause E.2.3.9 (MELT-CAB-TG)";

        }
        enum
          "three-element-complex-admittance-real-rg" {
          value 33;
          description
            "The real part of the 3-element complex admittance
with controlled metallic voltage (Ring-to-Ground).";
          reference
            "ITU-T G.996.2 clause E.2.3.9 (MELT-CAG-RG)";

        }
        enum
          "three-element-complex-admittance-imaginary-rg" {
          value 34;
          description
            "The imaginary part of the 3-element complex admittance
with controlled metallic voltage (Ring-to-Ground).";
          reference
            "ITU-T G.996.2 clause E.2.3.9 (MELT-CAB-RG)";

        }
        enum
          "loop-complex-admittance-real-hv-tr" {
          value 35;
          description
            "The real part of the loop complex admittance with high
metallic voltage (Tip-to-Ring).";
          reference
            "ITU-T G.996.2 clause E.2.3.10 (MELT-HAG-TR)";

        }
        enum
          "loop-complex-admittance-imaginary-hv-tr" {
          value 36;
          description
            "The imaginary part of the loop complex admittance with
high metallic voltage (Tip-to-Ring).";
          reference
            "ITU-T G.996.2 clause E.2.3.10 (MELT-HAB-TR)";

        }
        enum
          "three-element-capacitance-measurement-voltage-tr" {
          value 37;
          description
            "The AC voltage, VACTR-CC, for the 3-element capacitance
test with a controlled metallic voltage (Tip-to-Ring).";
          reference
            "ITU-T G.996.2 clause E.2.3.11 (MELT-ACV-CC-TR)";

        }
        enum
          "three-element-capacitance-measurement-voltage-tg" {
          value 38;
          description
            "The AC voltage, VACTG-CC, for the 3-element capacitance
test with a controlled metallic voltage
(Tip-to-Ground).";
          reference
            "ITU-T G.996.2 clause E.2.3.11 (MELT-ACV-CC-TG)";

        }
        enum
          "three-element-capacitance-measurement-voltage-rg" {
          value 39;
          description
            "The AC voltage, VACRG-CC, for the 3-element capacitance
test with a controlled metallic voltage
(Ring-to-Ground).";
          reference
            "ITU-T G.996.2 clause E.2.3.11 (MELT-ACV-CC-RG)";

        }
        enum
          "loop-capacitance-measurement-voltage-tr" {
          value 40;
          description
            "The AC voltage, VACTR-HC, for the loop capacitance test
with a high metallic voltage (Tip-to-Ring).";
          reference
            "ITU-T G.996.2 clause E.2.3.12 (MELT-ACV-HC-TR)";

        }
        enum
          "three-element-complex-admittance-measurement-voltage-tr" {
          value 41;
          description
            "The AC voltage, VACTR-CA, for the 3-element complex
admittance test with a controlled metallic voltage
(Tip-to-Ring).";
          reference
            "ITU-T G.996.2 clause E.2.3.13 (MELT-ACV-CA-TR)";

        }
        enum
          "three-element-complex-admittance-measurement-voltage-tg" {
          value 42;
          description
            "The AC voltage, VACTG-CA, for the 3-element complex
admittance test with a controlled metallic voltage
(Tip-to-Ground).";
          reference
            "ITU-T G.996.2 clause E.2.3.13 (MELT-ACV-CA-TG)";

        }
        enum
          "three-element-complex-admittance-measurement-voltage-rg" {
          value 43;
          description
            "The AC voltage, VACRG-CA, for the 3-element complex
admittance test with a controlled metallic voltage
(Ring-to-Ground).";
          reference
            "ITU-T G.996.2 clause E.2.3.13 (MELT-ACV-CA-RG)";

        }
        enum
          "loop-complex-admittance-measurement-voltage-tr" {
          value 44;
          description
            "The AC voltage, VACTR-HA, for the loop complex admittance
test with a high metallic voltage (Tip-to-Ring).";
          reference
            "ITU-T G.996.2 clause E.2.3.14 (MELT-ACV-HA-TR)";

        }
      }
      description
        "An enumerated list of MELT PMD measurement parameters.";
    }

    typedef melt-pmd-reporting-parameter {
      type enumeration {
        enum "measurement-frequency" {
          value 0;
          description
            "This parameter is the measurement frequency for a
3-element capacitance measurement, if performed with a
sinewave signal, or a for 3-element complex admittance
measurement. The range of valid values is from 10 to 1000
Hz with a granularity of 1 Hz.";
          reference
            "ITU-T G.996.2 clause E.2.2.1 (MELT-MFREQ)";

        }
        enum
          "foreign-voltage-input-impedance" {
          value 1;
          description
            "This parameter reports the nominal input impedance of the
measuring instrument during foreign voltage tests. The
range of valid values is from 0 to 10 megaohms with a
granularity of 1 ohm.";
          reference
            "ITU-T G.996.2 clause E.2.2.2 (MELT-IMP-V)";

        }
        enum
          "loop-complex-admittance-measurement-voltage" {
          value 2;
          description
            "This parameter is the peak amplitude of the differential
sinewave used by the measurement of the loop complex
admittance with a high voltage metallic test. The range of
valid values is from 0 to 150 volts and it shall be
represented in linear format with a granularity of 0.1
volts.";
          reference
            "ITU-T G.996.2 clauses E.1.1.7 and E.2.2.3 (MELT-HCA-V)";

        }
      }
      description
        "An enumerated list of MELT PMD reporting parameters.";
    }

    typedef melt-processing-derived-parameter {
      type enumeration {
        enum "open-wire-failure-type" {
          value 0;
          description
            "This sub-parameter is a five state indication of the type
of open wire failure defined as follows:

1) No open wire failure detected
2) Tip and ring wires open in equal distance
3) Tip wire open
4) Ring wire open
5) Undefined.

NOTE - An error-free loop will be classified as failure
state 2) in case that the remote end of the loop was left
open during the measurement, or the connected Customer
Premises Equipment (CPE) could not be detected (too low
parallel CPE system capacitance).";
          reference
            "ITU-T G.996.2 clause F.2.2.1.1 (MELT-O-WIRE-type)";

        }
        enum "open-wire-failure-distance" {
          value 1;
          description
            "This parameter represents a best-effort estimate of the
distance of the detected open wire failure from the
measurement point, i.e., from the central office or of
the total loop length if no failure is detected. A priori
knowledge of the loop characteristics is required for
reliable estimation of the distance. The range of valid
values is from 0 to 10000 meters with a granularity of 1
meter.";
          reference
            "ITU-T G.996.2 clauses F.2.1.2 and F.2.2.1.2
            (MELT-O-WIRE-DIST)";

        }
        enum "short-circuit-failure-type" {
          value 2;
          description
            "This parameter is a six-state indication of the type of
short circuit failure defined as follows:

1) No short circuit detected
2) Tip and ring wires shorted to GND
3) Tip wire shorted to GND
4) Ring wire shorted to GND
5) Tip and ring wires shorted to each other
6) Undefined.";
          reference
            "ITU-T G.996.2 clause F.2.2.2.1 (MELT-S-CCT-type)";

        }
        enum "leakage-identification" {
          value 3;
          description
            "This parameter indicates a leakage to GND failure,
classified into the following states:

1) No leakage detected
2) Tip and ring wire leaking to GND
3) Tip wire leaking to GND
4) Ring wire leaking to GND.";
          reference
            "ITU-T G.996.2 clause F.2.2.3 (MELT-LEAK-ID)";

        }
        enum
          "resistive-fault-identification" {
          value 4;
          description
            "This parameter indicates a resistive fault to GND
failure, classified into the following states:

1) No resistive fault detected
2) Resistive fault tip and ring to GND
3) Resistive fault tip to GND
4) Resistive fault ring to GND.";
          reference
            "ITU-T G.996.2 clause F.2.2.4 (MELT-RFAULT-ID)";

        }
        enum
          "foreign-voltage-type-classification" {
          value 5;
          description
            "The foreign voltage impairment in the loop under test is
classified into the following states:

1) No foreign voltage detected
2) 16 2/3 Hz AC voltage
3) 25 Hz AC voltage
4) 50 Hz AC voltage
5) 60 Hz AC voltage
6) POTS equipment (-48 volts DC)
7) ISDN equipment (-96 volts DC)
8) Undefined foreign voltage detected.

This classification shall be done separately for both,
the tip and the ring wire.";
          reference
            "ITU-T G.996.2 clause F.2.2.5.1 (MELT-FV-TYPE)";

        }
        enum
          "foreign-voltage-level-classification" {
          value 6;
          description
            "This parameter provides a general classification of the
foreign voltage into the following classes:

1) hazardous potential (e.g., power contact)
2) foreign electromotive force
3) other.";
          reference
            "ITU-T G.996.2 clause F.2.2.5.2 (MELT-FV-LEVEL)";

        }
        enum
          "far-end-signature-topology-type-identification" {
          value 7;
          description
            "This parameter specifies the topology types of the
detected far-end signature.

Valid response values are:

- no signature detected
- unknown signature
- signature type DR detected
- signature type ZRC detected.";
          reference
            "ITU-T G.996.2 clause F.2.2.6.1 (MELT-FES-ID)";

        }
        enum "cpe-identification-capacitive" {
          value 8;
          description
            "Customer Premises Equipment (CPE) detected shall be
reported if the measured capacitance value CTR-Term is
>= MELT-SYSC-CPE. CTR-Term shall represent the termination
capacitance only. Therefore, the line capacitance shall be
subtracted from the measured CTR value. For this equation
to hold, the MELT-SYSC-CPE value should be derived from the
nominal CPE capacitance by accounting for all tolerances
and be set to the minimum possible measurement result.";
          reference
            "ITU-T G.996.2 clause F.2.2.7 (MELT-CPE-ID)";

        }
      }
      description
        "An enumerated list of MELT processing derived parameters.";
    }

    // objects
    container melt {
      description
        "Metallic Line Test (MELT) configuration.";
      container profiles {
        description
          "Configuration profiles.";
        list pmd-profile {
          key "name";
          description
            "A list of Physical Medium Dependent (PMD) profiles.";
          leaf name {
            type bbf-yang:string-ascii64;
            description
              "A name that uniquely identifies the profile.";
          }

          leaf peak-metallic-voltage-tr {
            type uint8 {
              range "0..150";
            }
            units "volts";
            description
              "This parameter defines the peak metallic voltage which must
not be exceeded in any active measurement applying a
metallic voltage between tip and ring in order not to
conduct current in a non-linear termination located at the
far-end during the measurement. The range of valid values is
from 0 to 150 volts with a granularity of 1 volts. In the
case of a test performed with a sinewave signal, it applies
to the peak of the sinewave, not to its RMS value.";
            reference
              "ITU-T G.996.2 clause E.2.1.2 (MELT-PV)";

          }

          leaf pair-identification-tone-frequency {
            type uint16 {
              range "300..3400";
            }
            units "Hz";
            description
              "This parameter sets up frequency of the pair identification
tone as defined in clause E.1.2.1. The range of frequencies
is from 300 to 3400 Hz in granularity of 1 Hz.
The supported set of frequencies is at the vendor's
discretion.";
            reference
              "ITU-T G.996.2 clause E.2.1.4 (MELT-PIT-F)";

          }

          leaf pair-identification-tone-timeout {
            type uint16 {
              range "1..65535";
            }
            units "seconds";
            description
              "This parameter specifies the duration of the pair
identification tone. After timeout the pair identification
tone is deactivated automatically, if not deactivated
manually before (abort).";
            reference
              "ITU-T G.996.2 clause E.2.1.5 (MELT-PIT-T)";

          }

          leaf maximum-far-end-signature-conductive-voltage {
            type uint16 {
              range "0..500";
            }
            units "0.1 volts";
            description
              "This parameter specifies the maximum conduction voltage
level of an expected far-end signature. It defines the
minimum metallic voltage required for all measurements with
a high metallic voltage between tip and ring in order to
conduct current in a far-end signature during the
measurement. The range of valid values is from 0 to 50 volts
with a granularity of 0.1 volts.";
            reference
              "ITU-T G.996.2 clause E.2.1.5 (MELT-MAXFE-SCV)";

          }

          leaf minimum-far-end-signature-conductive-voltage {
            type uint16 {
              range "0..500";
            }
            units "0.1 volts";
            description
              "This parameter specifies the minimum conduction voltage
level of an expected far-end signature. It defines the
maximum metallic voltage allowed for all measurements with a
controlled metallic voltage between tip and ring in order
not to conduct current in a far-end signature during the
measurement. The range of valid values is from 0 to 50 volts
with a granularity of 0.1 volts. In the case of a measurement
performed with a sinewave signal, it applies to the peak of
the sinewave, not to its RMS value.";
            reference
              "ITU-T G.996.2 clause E.2.1.6 (MELT-MINFE-SCV)";

          }

          leaf-list measurement-class {
            type identityref {
              base measurement-class;
            }
            ordered-by user;
            description
              "This parameter defines the list of measurements to be
executed. It shall support a single measurement or a set of
MELT measurements in a consecutive manner. The measurements
of interest are selected via a flag register, or equivalent.
If no elements exist, no measurements will be executed.";
            reference
              "ITU-T G.996.2 clause E.2.1.1 (MELT-MCLASS)";

          }

          leaf signal-frequency-for-active-ac-tests {
            type uint16 {
              range "10..1000";
            }
            units "Hz";
            description
              "This parameter controls the frequency used during the
3-element capacitance test, if performed with a sinewave
signal, and during the 3-element complex admittance test.
This parameter shall be represented in linear format with
values from 10 to 1000 Hz with a granularity of 1 Hz.

The supported set of frequencies is at the vendor's
discretion with an option to operate in automatic mode for
which the testing routine will select the frequency on its
own.";
            reference
              "ITU-T G.996.2 clause E.2.1.3 (MELT-AC-F)";

          }
        }  // list pmd-profile

        list processing-profile {
          key "name";
          description
            "A list of processing profiles.";
          leaf name {
            type bbf-yang:string-ascii64;
            description
              "A name that uniquely identifies the profile. Note that
entries in this list are referenced by the leaf
'processing-profile', defined in bbf-melt-pointers, which
is dependent on the feature 'melt-p'.";
          }

          container loop-resistance-classification-threshold {
            description
              "This parameter defines the limits for classification of the
resistances to ground (GND) of the loop under test.

The following limit values need to be defined:
 - maximum resistance for a short-circuit to GND;
 - minimum resistance for a leakage to GND;
 - maximum resistance for a leakage to GND.

A resistance to ground measured as being:
 - Below the maximum resistance for a short circuit shall be
   interpreted as a short circuit to GND.
 - Above the maximum resistance for a short circuit and
   below the minimum resistance for a leakage shall be
   interpreted as a resistance fault to GND.
 - Above the minimum resistance for a leakage and below the
   maximum resistance for a leakage shall be interpreted as
   a leakage to GND.
 - Above the maximum resistance for a leakage shall be
   interpreted as a high impedance to GND.";
            reference
              "ITU-T G.996.2 clause F.2.1.1 (MELT-LRC-TH)";

            leaf maximum-resistance-short-circuit-to-ground {
              type uint32;
              units "0.1 kiloohms";
              description
                "The maximum resistance threshold for a short circuit to
ground.";
            }

            leaf minimum-resistance-leakage-to-ground {
              type uint32;
              units "0.1 kiloohms";
              description
                "The minimum resistance threshold for a leakage to ground.";
            }

            leaf maximum-resistance-leakage-to-ground {
              type uint32;
              units "0.1 kiloohms";
              description
                "The maximum resistance threshold for a leakage to ground.";
            }
          }  // container loop-resistance-classification-threshold

          container loop-parameters-per-unit-length {
            description
              "The a priori knowledge of some characteristic parameters per
Unit length of the loop under test is necessary to derive
length or distance information from the Metallic Line Test
Physical Medium Dependent (MELT-PMD) measurements. This
parameter combines the set of required loop parameters:

1) Cable characteristic capacitance per unit length between
   tip and ring. The range of valid values is from 0 to 100
   nanofarads per kilometer with a granularity of 0.1
   nanofarads per kilometer.
2) Cable characteristic capacitance per unit length between
   tip and GND and ring and GND. The range of valid values
   is from 0 to 100 nanofarads per kilometer with a
   granularity of 0.1 nanofarads per kilometer.
3) Cable loop DC resistance per unit length (sum of both
   wires). The range of valid values is from 50 to 400
   ohms per kilometer with a granularity of 1 ohm per
   kilometer.";
            reference
              "ITU-T G.996.2 clause F.2.1.2 (MELT-LOOP-PARAMS)";

            leaf capacitance-per-unit-length-tr {
              type uint16 {
                range "0..1000";
              }
              units
                "0.1 nanofarads per kilometer";
              description
                "Cable characteristic capacitance per unit length between
tip and ring. The range of valid values is from 0 to 100
nanofarads per kilometer with a granularity of 0.1
nanofarads per kilometer.";
            }

            leaf capacitance-per-unit-length-tg-rg {
              type uint16 {
                range "0..1000";
              }
              units
                "0.1 nanofarads per kilometer";
              description
                "Cable characteristic capacitance per unit length between
tip and ground (GND) and ring and GND. The range of valid
values is from 0 to 100 nanofarads per kilometer with a
granularity of 0.1 nanofarads per kilometer.";
            }

            leaf dc-resistance-per-unit-length {
              type uint16 {
                range "50..400";
              }
              units "ohms per kilometer";
              description
                "Cable loop DC resistance per unit length (sum of both
wires). The range of valid values is from 50 to 400
ohms per kilometer with a granularity of 1 ohm per
kilometer.";
            }
          }  // container loop-parameters-per-unit-length

          leaf hazardous-dc-voltage-level {
            type uint8 {
              range "0..200";
            }
            units "volts";
            description
              "This parameter defines the level above which DC voltage shall
be identified as hazardous. The hazardous voltage level shall
be configurable between 0 and 200 volts with a granularity of
1 volt.";
            reference
              "ITU-T G.996.2 clause F.2.1.3 (MELT-HDCV-L)";

          }

          leaf hazardous-ac-voltage-level {
            type uint8 {
              range "0..200";
            }
            units "volts RMS";
            description
              "This parameter defines the level above which AC voltage shall
be identified as hazardous. The hazardous voltage level shall
be configurable between 0 and 200 volts RMS with a
granularity of 1 volt RMS.";
            reference
              "ITU-T G.996.2 clause F.2.1.4 (MELT-HACV-L)";

          }

          leaf foreign-emf-dc-voltage-level {
            type uint8 {
              range "0..50";
            }
            units "volts";
            description
              "This parameter defines the level above which a DC voltage
shall be identified as a foreign Electromagnetic Field (EMF).
The foreign EMF voltage level shall be configurable between
0 and 50 volts with a granularity of 1 volt.";
            reference
              "ITU-T G.996.2 clause F.2.1.5 (MELT-FDCV-L)";

          }

          leaf foreign-emf-ac-voltage-level {
            type uint8 {
              range "0..50";
            }
            units "volts RMS";
            description
              "This parameter defines the level above which an AC voltage
shall be identified as a foreign Electromagnetic Field (EMF).
The foreign EMF voltage level shall be configurable between
0 and 50 volts RMS with a granularity of 1 volt RMS.";
            reference
              "ITU-T G.996.2 clause F.2.1.6 (MELT-FACV-L)";

          }

          leaf system-capacitance-cpe-side {
            type uint16 {
              range "0..20000";
            }
            units "0.1 nanofarads";
            description
              "This parameter is the expected value of the system
capacitance at the Customer Premises Equipment (CPE) side as
it appears in parallel between tip and ring in a
corresponding Metallic Line Test (MELT) measurement.
A priori knowledge of this capacitance improves accuracy of
the results and offers additional degrees for
interpretation. The range of valid values is from 0 to 2
microfarads with a granularity of 0.1 nanofarads.";
            reference
              "ITU-T G.996.2 clause F.2.1.7 (MELT-SYSC-CPE)";

          }
        }  // list processing-profile
      }  // container profiles
    }  // container melt
  }  // module bbf-melt